Classical & Emerging Electronic Devices (CEED) Group
Publications
Journal Papers
| Invited
Conference Papers | Conference
Proceedings Papers | Patents|
Thesis
Journal
2008
“Medium
Scale Carbon Nanotube Thin Film Integrated Circuits on Flexible Plastic
Substrates”, Q. Cao, H.-S. Kim, N. Pimparkar, J.P. Kulkarni, C. Wang,
M. Shim, K. Roy, M.A. Alam, J. Rogers, Nature, vol. 454(24), pp. 495-500,
2008. PDF
“Theory
and Practice of ‘Striping’ for Improved On/Off Ratioin Carbon
Nanotube Thin Film Transistors”, N. Pimparkar, Q. Cao, J. Rogers,
M.A. Alam, (Submitted), 2008.
“Statistical
Interpretation of Femto-Molar Detection”, J. Go and M.A. Alam
(Submitted), 2008.
“On
the Possibility of Degradation-Free Field Effect Transistors,” A. E.
Islam, and M. A. Alam, Applied Physics Letter, 92, 173504, 2008. PDF
“On-chip
Pattering of Biomolecules in Fluid for Integrated Sensor
Platform,” Eibol, J. Reddy, P. Nair, D. Bergstrom, M. Alam and R.
Bashir, Nature Materials, 2008. (Submitted).
“Optimization
of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and
Analytical Models,” A. E. Islam, G. Gupta, K. Ahmed, S. Mahapatra and
M. A. Alam, IEEE Transaction on Electron Devices, 55(5), pp. 1143-1152, May
2008. PDF
“Screening-limited
Response of Nanobiosensors”, P. Nair and M. Alam, Nanoletters, 2008. PDF
“Electrical
Detection of Biological Interaction between TAT Peptide and TAR RNA via
GaAs Junction Field Effect Transistors,” Kangho Lee, Pradeep R Nair,
Muhammad A. Alam, and David B. Janes, Journal of Applied Physics, 103,
114510, 2008. PDF
“Defect
generation in p-MOSFETs Under Negative Bias Stress: An Experimental
Perspective,” (Invited) S. Mahapatra and M. A. Alam, IEEE
Transaction on Material and Reliability, March 2008. PDF
“A
Bottom-up Redefinition for Mobility and the Effect of Poor Tube-Tube
Contact on the Performance of CNT Nanoelectronics,” N. Pimparkar and
M. Alam, IEEE Electron Device Letters, Accepted, 2008.
“Device
Considerations for Development of Conductance-based Biosensors”,
(Invited), Kangho Lee, Adiana Scott, David Janes, Pradeep Nair, and M.
Alam, Journal of Applied Physics, Under Review, 2008.
“Exploring
the Capability of Multi-Frequency Charge Pumping in Resolving Location and
Energy Levels of Traps Within Dielectric”, M. Masuduzzaman, A. E.
Islam, and M. A. Alam, Transaction on Electron Devices, Submitted, 2008.
“Theory
of Breakdown Position Determination by Voltage- and Current Ratio
Methods”. M. A. Alam, D.
Varghese and B. Kaczer, Transaction on Electron Devices, Accepted, 2008.
“Isolation
of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO
pMOSFETs”, S. Mahapatra, V.D. Mehta, A.E. Islam, and M.A. Alam,
Submitted to Transaction on Electron Devices, 2008.
“Reliability-
and Process Variation Aware Design of Integrated Circuits, (Invited)” M. A. Alam,
Microelectronics Reliability, Accepted, 2008.
2007
“Limits
of Performance Gain of Aligned CNT over Randomized Network: Theoretical
Predictions and Experimental Validation,” N. Pimparkar, C.
Kocabas, S. J. Kang, J. Rogers and M. A. Alam, Electron Device
Letters, July 2007. PDF
“Dimensionally Frustrated Diffusion Towards a Fractal
Aborber,” P. Nair and M. Alam, Physical Review Letters, Dec. 2007. PDF
“Design Considerations of Nanowire Biosensors”, P.
Nair and M. Alam, IEEE Transaction on Electron Devices, Dec. 2007. PDF
“Simulation of Carbon Nanotube FETs including Hot-Phonon
and Self-Heating Effects,” Sayed Hasan, M. A. Alam and M. S. Lundstrom,
IEEE Transaction on Electron Devices, Special Issue on Modeling and
Simulation, 54(9), pp. 2352-2361, 2207. PDF
“Scaling Limits of Double-Gate and Surround Gate Z-RAM
Cells,” N. Butt and M. A. Alam, , IEEE Transaction on Electron
Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2255-2262,
2007. PDF
“Soft Error Trends and New Physical Model for Ionizing
Dose Effects in Double Gate Z-RAM Cell,” N. Butt and M. A. Alam, IEEE
Trans. on Nuclear Science, 2007. (Accepted). PDF
“Recent Issues in Negative-Bias Temperature Instability:
Initial Degradation, Field Dependence of Interface Trap Generation, Hole
Trapping Effects, and Relaxation,” (Invited paper) A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra,
and M. A. Alam, IEEE Transaction on Electron Devices, Special Issue on
Modeling and Simulation, 54(9), pp. 2143-2154, 2007. PDF
“Off state Degradation in Drain Extended NMOS
Transistors: Interface Damage and Correlation to Dielectric
Breakdown,” D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, S.
Krishnan and M. A. Alam, IEEE Trans. Electron Devices, 54(10), pp.
2669-2678, 2007. PDF
“Experimental and Theoretical Studies of Transport
through Large Scale, Partially Aligned Arrays of Single Walled Carbon
Nanotubes in Thin Film Type Transistors”, C. Kocabas, N. Pimparkar, O. Yesilyurt , M. A.
Alam and J.A. Rogers, Nanoletters, 2007. PDF
“High Performance Electronics Based on Dense, Perfectly
Aligned Arrays of Single Walled Carbon Nanotubes”, Seong Jun Kang, Coskun Kocabas,
Taner Ozel, Moonsub Shim, Ninad Pimparkar, Muhammad A. Alam, Slava Rotkin
John A. Rogers, Nature Nanotechnology, 2007. PDF
“Current-Voltage Characteristics of Long-Channel
Nanobundle Thin-Film Transistors: A Bottom-Up Perspective”, N.
Pimparkar, Q. Cao, S. Kumar, J. Murthy, J. Rogers, and M. Alam, Electron
Devices Letters, 28(2), pp. 157-160, Jan. 2007. PDF
“A Generalized Reaction-Diffusion Model With Explicit
H-H2 Dynamics for Negative Bias Temperature Instability
Degradation” H. Kufluoglu and M. Alam, IEEE Trans. Electron Devices, vol.
54(5), pp.1101-1107, 2007. PDF
“Impact of Negative Bias
Temperature Instability in Nano-Scale SRAM Array: Modeling and
Analysis,” K. Kang, K. Roy, H. Kufluoglu and M. A. Alam, IEEE
Transactions on Computer-Aided Design of Integrated Circuits and System, vol.
26, no. 10, October 2007, pp. 1770-1781. PDF
“N-type Field-effect Transistors using Multiple Mg-doped
ZnO Nanorods”, Sanghyun
Ju, Jianye Li, Ninad Pimparkar , Muhammad A. Alam, R.P.H. Chang and David
B. Janes, IEEE Transaction on Nanotechnology, 2007. PDF
“Effect
of Percolation on Thermal Transport in Nanotube Composites,” S.
Kumar, M. Alam, and J. Murthy, Applied Physics Letters, 90, 104105, 2007. PDF
“Critical
Analysis of short-term negative bias temperature instability measurements:
Explaining the effect of time-zero
delay for On-the-Fly Measurements”, A. E. Islam, H. Kufluoglu, D.
Varghese, M. Alam, Applied Physics Letter, 90, 083505, 2007. PDF
“Sub-Bandgap
Impact Ionization and Excitation in Carbon Nanotube Transistors" , J.
Guo, M. Alam, and Y. Ouyang, Journal of Applied Physics, 2007 (accepted)PDF
“Performance
Assessment of Sub-Percolating Nanobundle Network Thin Film
Transistors by an Analytical Model ”
by N. Pimparkar, J. Guo, and M.A. Alam,
Transaction on Electron Devices,
54(4), 2007. PDF
“Negative Bias Temperature Instability:
Estimation and Design for Improved Reliability of Nanoscale
Circuits,” B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, K.
Roy, IEEE Transactions on
Computer-Aided Design of Integrated Circuits and System, 26(4),
743-751, April 2007. PDF
“Computational Model for Transport in Nanotube-Based
Composites with Applications to Flexible Electronics”, S. Kumar, J. Murthy,
and M. Alam, Journal of Heat Transfer, 129, pp. 500-508, 2007. PDF
“Electrical and Thermal Transport in Thin-Film Nanotube
Composites with Applications to Macroelectronics”, S. Kumar, M. Alam,
and J. Murthy, Journal of Nanomanufacturing, 2007 (Accepted).
2006
“Theory of Nanocomposite Network Transistors”, (Invited paper) M. Alam, N.
Pimparkar, S. Kumar, J. Murthy, MRS Bulletin, 31(6), 923, 2006. PDF
“Performance limits of Nano-Biosensors”, P. R.
Nair and M. A. Alam, Applied Physics Letters, 88, 233120, 2006 PDF
(Also profiled in Virtual Journal of Nanoscale Science and Technology and
Virtual Journal of Biological Physics Research: Both publishers of Selected
Papers from all other print journal).
“Anomalous Resonance in a Nanomechanical
Biosensor”, A. Gupta, P.
Nair, D. Akin, M. Ladishch, S. Broyles, M. Alam, and R. Bashir, Proc. of
National Academy of Sciences, 103(36), 13362, 2006 . PDF
"Theoretical Investigation on Photoconductivity of Single
Intrinsic Carbon Nanotubes", Y.-K. Yoon, M. Alam, J. Guo, Applied Physics
Letters, 88, 133111, 2006. PDF
"Performance of
Carbon Nanotube-Dispersed Thin-Film Transistors," S. Kumar, G.
B. Blanchet, M. S. Hybertsen, J. Y. Murthy, and M. A. Alam, Applied Physics
Letters, 89, 143501, 2006. PDF
"Theory of Transfer Characteristics of Nanotube Network
Transistors," S. Kumar, N. Pimparkar, J. Y. Murthy, and M. A. Alam,
Applied Physics Letters, 88, 123505, 2006. PDF
“A Comprehensive Model for PMOS NBTI
Degradation: Recent Progress”, (Invited paper) M. Alam, H.
Kufluoglu, D. Varghese, S. Mahapatra, Microelectronics Reliability, 47(6),
2007. pp. 853-862, Dec. 2006. PDF
“A Theory of Interface Trap Induced NBTI
Degradation for Reduced Cross-section MOSFETs,” H. Kufluoglu and M.
A. Alam, IEEE Transaction on
Electron Devices, 53(5), 1120-1130, 2006. PDF
2005
”Percolating Conduction in Finite Nanotube
Networks”, S. Kumar, J. Murthy, and M. Alam, Physical Review Letters,
95(6), 066802, 2005. PDF
“High-Frequency Performance
Projections for Ballistic Carbon Nanotube Transistors”, S. Hasan, S.
Salahuddin, M. Vaidyanathan, and M. A. Alam, IEEE Trans. on Nanotechnology,
6, p. 2007, 2005. PDF
“Macroelectronics: Perspective on Technology and
Applications” (Invited paper)
R. H. Reuss, B. R. Chalamala, A. Moussessian, M. G. Kane, A. Kumar, D. C. Zhang,
J. A. Rogers, M. Hatalis, D. Temple, G. Moddel, B. J. Eliasson, M. J.
Estes, J. Kunz, E. Handy, E. S. Harmon, D. B. Salzman, J. M. Woodall, M.
Ashraf Alam, J. Murthi, S. C. Jacobson, M. Olivier, D. Markus, P. M.
Cambell, and Eric Snow, Proceedings of IEEE, Special Issue on Flexible
Electronics, 93(7), pp. 1239-1256, 2005. PDF
“Carrier Transport and Light-Spot Movement in Carbon-Nanotube
Infrared Emitters”, J. Guo and M. Alam, Applied Physics Letters, 86,
023105, 2005. PDF
“Negative
bias temperature instability in CMOS devices”, (Invited paper) S. Mahapatra, M. A.
Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese and D. Saha,
Microelectronics Engineering, Special issue on INFOS, 80, 114-121, 2005. PDF
“Hole Energy Dependent
Interface Trap Generation in MOSFET Si/SiO2 Interface”, D. Varghese, S.
Mahapatra and M. A. Alam, IEEE Electron Device Letters, 26(8), 572-574,
2005. PDF
''Impact of NBTI on the Temporal Performance Degradation of
Digital Circuits,'' B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam and K.
Roy, IEEE Electron Device Letters, 26(8),
pp. 560-562, 2005. PDF
“Gate Dielectric Breakdown in the Time-Scale of ESD
Breakdown,” (Introductory
Invited Paper), B. Weir, C.
Leung, P. Silverman, and M. Alam, Microelectronics Reliability, 45, pp.
427-436, 2005. PDF
“Comment on “Analysis of Hydroxyl Group Controlled
Atomic Layer Deposition of Hafnium Oxide From Hafnium Tetracloride and
Water”, M. Alam and M. Green,
Journal of Applied Physics, 98, 016101, 2005. PDF
“A
Computational Model of NBTI and Hot Carrier Injection Time-Exponents for
MOSFET Reliability,” H.
Kufluoglu and M. A. Alam, Journal of Computational Electronics, 3(3),
pp.165-169, 2005. PDF
2004
“DNA
Mediated Fluctuations in Ionic Current through Silicon Oxide
Nano-Channels”, R. Bashir, H. Chang, F. Kosari, G. Andreakakis, M. A.
Alam, G. Vasmatzis, Nano
Letters, 4(8), pp. 1551-1556,
2004.
“A Comprehensive Model of PMOS
Negative Bias Temperature Degradation,” (Invited paper) M. A. Alam and S. Mahapatra, Special issue of Microelectronics Reliability, volume 45,
number 1, pp. 71-81, 2004. PDF
"Investigation
and Modeling of Bulk and Interface Trap Generation During Negative Bias
Temperature Instability in PMOSFETS," M. A. Alam and S.
Mahapatra, IEEE Trans. on Electron
Devices , 51(9), pp. 1371-1379, 2004. PDF
1995-2003
“A
Mathematical Description of
Atomic Layer Deposition, and its Application to the Nucleation and
Growth of High-k Gate Dielectrics,” M. A. Alam and M. L. Green, Journal of Applied Physics, vol. 94(5), pp. 3403-3413, 2003.
“Uncorrelated Breakdown of
Silicon Integrated Circuits,” M. A. Alam, R. K. Smith, B. E.
Weir, and P. J. Silverman, Nature,
6914, p. 378, 2002.
“A Future of Function
or Failure?” M. A. Alam, Bonnie
E. Weir, and P. Silverman, IEEE
Circuits and Devices - The Electronics and Photonics Magazine ( Invited paper ), 18(2), pp. 42-48, 2002.
“SILC as a Measure of
Trap Generation and Predictor of TBD in Ultrathin Oxides”, M. A. Alam, IEEE Transaction on
Electron Devices, 49 (2), pp.
226-231, 2002.
“A Study of Soft and
Hard Breakdown (part I): The Statistical Model,” M. A. Alam, B. E. Weir, and P. J.
Silverman, IEEE Transaction on
Electron Devices, 49 (2), pp.
232-238, 2002.
“A Study of Soft and
Hard Breakdown (part II): Principles of Area, Thickness, and Voltage
Scaling,” M. A. Alam, B. E. Weir, and P. J. Silverman, IEEE
Transaction on Electron Devices, 49 (2), pp. 239-246, 2002.
“Photo-emission Study
of Zr- and Hf- Silicates for use as High-k Oxides: role of second neighbors
and interface charge,” R.
L. Opila, G. D. Wilk, M. A. Alam,
Applied Physics Letters, 81 (10), pp. 1788-90, 2002.
“Role
of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well
Semiconductor Laser Diodes,” M. S. Hybertsen, B. Witzigmann, M. A.
Alam, and R. K. Smith, Journal of Computational Electronics, 1: pp.
113-118, 2002.
“A Computational Model for
Oxide Breakdown - Theory and Experiment,” M. A. Alam, B. E. Weir, J.
D. Bude, P. Silverman, and A. Ghetti,
(Invited paper), Microelectronics Engineering, pp.
137-147, 2001.
“Soft Breakdown at
All Positions Along the NMOSFET Channel,” B. E. Weir, M. A. Alam, P. J. Silverman, Microelectronics
Engineering, 59 (1-4), pp. 17-23, 2001.
“Gate Oxide
Reliability Projection to the Sub-2nm Regime,” B. E. Weir, M. A. Alam, J. D. Bude,
P. J. Silverman, A. Ghetti, F. Baumann, P. Diodato, D. Monroe, T. Sorsch,
G. Timp, Y. Ma, M. M. Brown, A. Hamad, D. Hwang, P. Mason, Semiconductor Science and Technology,
15, pp. 455-461, 2000.
“Ultra-thin Gate
Oxide Reliability Projections,”
B. E. Weir, M. A. Alam, P.J. Silverman, F. Baumann, D. Monroe, J. D.
Bude, G. L. Timp, A. Hamad, Y. Ma, M. M. Brown, D. Hwang, T.W. Sorsch, A.
Ghetti, and G. D. Wilk, Solid State
Electronics, 46 (3), pp.
321-328, 2000.
“Anode Hole
Generation Mechanisms,” (Invited
paper) A. Ghetti, M. A.
Alam, and J. Bude, Microelectronics Reliability,
41(9), pp. 1347-1354, 2001.
“Simulation
of Semiconductor Quantum Well Lasers,” M. A. Alam, M. Hybertsen, R. K. Smith,
G. A. Baraff, Special issue of
IEEE Transaction of Electron Devices (Invited
paper), 47 (10), pp.
1917-1925, 2000.
“Multi-Wavelength DFB
Laser Array with Integrated Spot Size Converters,” L. J. P. Ketelsen,
J. Grenko, S. Sputz, M. Focht, J. Vandenberg, J. E. Johnson, C. Reynolds,
J. Geary, J. Levkoff, K. Glogovsky, D. Stampone, S. N. G. Chu, F. Walters,
J. Lentz, M. A. Alam, R.
People, M. S. Hybertsen, R. Leibenguth, G. Przybylek, L. Zhang, Journal of Quantum Electronics,
36(6), pp. 641-648, 2000.
“Monolithically
Integrated Semiconductor Optical Amplifer and Electro-Absorption Modulator
with Dual Waveguide Spot-size Converter,” J. Johnson, L. Ketelsen, J. Grenko,
S. Sputz, J. Wandenberg, M. Focht, C. Reynolds, R. People and M. Alam, Selected Topics in Quantum
Electronics, 6(1), pp. 19-25, 2000.
“Modeling of
Photoluminescence in the Multi-Quantum Well Laser Heterostructures,”
A. Grinberg, M. A. Alam, S.K. Sputz,
IEEE J. of Quantum Electronics, 35(1), pp. 84-92, 1999.
“Role of p-doping
Profile and Regrowth on the Static Characteristics of 1.3 um MQW
InGaAsP-InP Lasers: Experiment
and Modeling,”
G.L. Belenky, C.L.
Reynolds, D.V. Donetsky, G.E. Shtengel, M.S. Hybertsen, M. A.
Alam, G. A. Baraff, R.K. Smith, R. F. Kazarinov, J.
Winn, L.E. Smith, Journal of
Quantum Electronics, 35(10),
pp. 1515-1520, 1999.
“Simulation and
Characterization of Selective
Area MOCVD Process,” M. A.
Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S.
Chu, T. Perbell, M. Hybertsen, J. Vandenberg, K.
Evans-Lutterodt, E. Isaacs, L. Gruezke, M. Marcus, Applied Physics Letters, 74, p.
1617, 1999.
“Synchrotron X-Ray
Micro-Diffraction Diagnostics of Multilayer Optoelectronic
Devices,” Z-H. Coi, E.
Isaacs, K. Evans-Lutterodt, J. Grevko, R. Blew, S.
Sputz, J. M.
Vandenberg, R. People, M. Alam, M. Hybertsen, L. Ketelsen, Applied
Physics Letters, 75, p. 100, 1999.
“Effect of Carrier Transport on
the L-I Characteristics of Quantum Well Lasers in the presence of Spatial
Hole Burning,” M. A.
Alam, IEEE J. of Quantum
Electronics, 33, pp. 1018-1024, 1997.
“Effects of Carrier
Heating on Laser Dynamics – A Monte Carlo Study,” M. A. Alam and M.S. Lundstrom, IEEE Journal of Quantum Electronics,
33, pp. 2209-2220, 1997.
“A Two Dimensional Simulation
of Organic Transistors,'' M. A. Alam,
A. Dodabalapur, and M. Pinto,
Transaction on Electron Devices Special Issue on Organic and
Polymeric Devices, 44. pp.
1332-1337, 1997.
“Influence of
Quasi-Ballistic Base Transport on the
Small Signal Y-Parameters of Si Bipolar Transistors,” M. A. Alam, M. Schroter, Mark S.
Lundstrom, IEEE Electron Device
Letters, 17 (4), pp. 184-186, 1996.
“A Transition Matrix
Approach for Monte Carlo Simulation of
Coupled Electron/Phonon/Photon Dynamics,” M. A. Alam and M.S. Lundstrom, Applied Physics Letters, 67 (4), pp.
512-514, 1995.
“ A Small Signal, One flux Model for Short Base
Transport,” M. A. Alam, S. Tanaka, and M.S.
Lundstrom, Solid State Electronics, 38, pp. 177-182, 1995.
1990-1995
“Simple Analysis of Carrier
Transport and Build-Up in Separate Confinement Heterostructure Quantum Well
Lasers,” M. A. Alam and M.S. Lundstrom, IEEE Photonics Technology
Letters, 6 (12), pp. 1418-1420, 1994.
“Simulation of
AlGaAs/GaAs HBTs by Scattering Matrix Solution to the Boltzmann
Equation,” M. A. Alam and
M.S. Lundstrom, Semiconductor Science and Technology, 9, pp. 862-864, 1994.
“Scattering
Matrix Formulation of Electron Transport in Compound Semiconductor
Devices,” M. A. Alam and
M.S. Lundstrom, Solid
State Electronics, 37
(8), pp. 1509-1520, 1994.
“A Critical
Examination of the Assumptions Underlying Macroscopic Transport Equations
for Silicon devices,”
M.A. Stettler, M.A. Alam and M. Lundstrom,, IEEE Transaction on Electron
Devices, 40 (4), pp. 733-740, 1993.
“ Formulation of
Boltzmann Equation in terms of Scattering Matrices,” M. A. Alam, M.A. Stettler and M.S.
Lundstrom, Solid State
Electronics, 36, pp. 263-271, 1993.
“ Spectral Flux Method to Solve Boltzmann Equation,” M.A. Alam, M.A. Stettler and M.S.
Lundstrom, Journal of Applied
Physics, 73 (10), pp. 4998-5003, 1993.
“A Self-consistent
Analysis in presence of Phase-randomizing Processes for Double-barrier
Structures,” M. A. Alam,
R.A. Morrisey and A.N. Khondker, Journal of Applied Physics, 71, pp. 3077-3090, (1992).
“On Density of
States, Electron Transport Mechanisms and Chemical Potentials in Mesoscopic
system,” A.N. Khondker
and M. A. Alam, Physical Review
B15, 45, pp. 8516-8525, 1992.
“Influence of Phase-breaking processes on Shot
Noise in Resonant Tunneling Devices,” M. A. Alam and A.N. Khondker,
IEEE Transaction on Electron Devices, 39, pp. 2184-2186, 1992.
“Are there extra
scattering mechanism in the Well of a resonant-tunneling diode?” R.
A. Morrisey, M. A. Alam and
A.N. Khondker, Physica B, 182, pp 61-63, 1992.
“Landauer-Buttiker
Conductance Formulas in Presence of Inelastic Scattering,” A.N. Khondker and M. A. Alam, Physical Review B15, 44, pp.
5444-5452, 1991.
“Application of
Quantum Mechanical Wave Impedance in the Solution of Schroedinger's
Equation in Quantum
Well,” S.M.F.
Kabir, M.R. Khan, M. A. Alam, Solid State Electronics, 34, pp. 1466-1468,
1991.
“An Efficient
Self-consistent Model for Resonant Tunneling Structures,” M. A. Alam and A.N. Khondker, Journal of Applied Physics, 68, pp. 6501-6503,
1990.
Invited Conference
Presentations
2008
“Physics and Technology of Nanonet Electronics”, Columbia University, July, 2008.
“How ‘form defines function’ in third
generation Photovoltaics”, Joint India-US Workshop on Scalable
Nanomaterials for Enhanced Energy Transport, Conversion and Efficiency,
2008.
“Scaling Limits of Biosensors,” Plenary
Presentation, IEEE Conference on Ultimate Integration in Silicon, Udine, Italy.
2008.
“Physical Principles of Nanonet Electronics,” Keynote Presentation, 5-th Annual
Conference on Foundation of Nanoscience (FNANO08), Snowbird, Utah, April 23, 2008.
“Nanobiosensors in Nanomedicine”, International Conference on
Nanotechnology : Opportunities and Challenges, Saudi Arabia, June 2008.
“Reliability Aware Design of Future Electronics,” Plenary Presentation, European
Symposium on Reliability of Electron Devices, Maastricht, Netherlands,
Sept. 2008
“Nanonet
Electronics,” IEEE Distinguished Lecture, Rutgers University,
April, 2008.
“The
Future of Biosensors,” IEEE Distinguished Lecture, Ball State
University, April,
2008.
2007
“Physics of Nanobiosensors”, P. Nair and M. Alam, Nano DDS, Washington DC
, June 18-20, 2007.
“Physics of Nanonet
Electronics”, IEEE Distinguished Lecture, University
of Texas at Arlington , Nov. 8, 2007.
“Computational
Modeling: An Industrial Engineer’s Perspective”, Excellence in
Computer Simulation, UC Berkeley, Nov. 6, 2007.
“Theory of Pick-up
Transistors and Its Potential to Transform Macroelectronics and
Biosensing”, IEEE New-Jersey Section presentation, May 7, 2007.
“Performance Limits of
Nano-composie Transistors and Nanobio-Sensor”, M. Alam, N. Pimparkar,
S. Kumar, P. Nair, J. Murthy, 65th International Device Research
Conference, Notre Dame, June 18-20, 2007.
“Nano for Bio?”,
M. Alam, 65th Device Research Conference Rump Session, Notre
Dame, June 18-20, 2007.
“Theory of Pick-up
Transistors and Its Potential to Transform Macroelectronics and
Biosensing”, IEEE New-Jersey Section presentation, May 7, 2007.
“Simulation of
Nanobiosensors”, M. A. Alam and P. Nair, IEEE-Nano, Hong-Kong, Aug.
2-5, 2007.
“Scaling Limits of
Nanoelectromechanical Sensors”, M. Alam, P. Nair, and R. Bashir, International
Workshop on Nanomechanical Sensors, Montreal
, May 27-30, 2007.
“ Percolation and
Fractal Geometry: How Spatial Inhomogeneity is Reshaping Modern
Semiconductor Devices”, M. Alam and N. Pimparkar, S. Kumar, J.
Murthy, Device Research Conference, Notre Dame, Indiana, June 20-22, 2007.
“Frontiers
and Future of Computational Microelectronics: Perspective of a Device
Physicist”, M. Alam, Electron Device Society Distinguished Lecture,
Engineers’ Institute of Bangladesh, Dhaka,
Bangladesh,
July 20, 2007.
“Reliability-Aware
VLSI Circuit Design”, M. Alam, Invited Tutorial at the 14th
International Conference on Physical and Failure Analysis of Integrated
Circuits, Bangalore, India, July 11-13, 2007.
“Iddq
as a Probe into the Dynamics of Time-Dependent Degradation”, M. Alam,
K. Kang, and K. Roy, 14th International Conference on Physical
and Failure Analysis of Integrated Circuits, Bangalore, India, July 11-13, 2007.
“Theory and Performance
of Nanocomposite Sensors”
M. Alam and N. Pimparkar,” Microwave Theory and Techniques
Conference, Hawaii
, June 20-22, 2007 (Tutorial).
2006
“Performance of
Nanocomposite Transistors”, M. Alam, Army Research Organization
Conference on “Tools for Nanomanufacturing”, West Lafayette, IN,
Oct. 2-4, 2006.
“A
Computational Study of Carbon Nanotube Optoelectronic Devices” Y.
Yoon, Y. Ouyang, M. Alam, and J. Guo, Optics East, Boston, MA, Oct. 1-4, 2006.
“Nanocomposite
Transitors: A Novel Technology for Macroelectronic Applications”, M.
Alam, Columbia
University ECE
Lecture Series, Sept. 9, 2006.
“Performance Limits and
Design Considerations of Nanobio Sensors,” M. Alam and P. Nair, 208
ECS Meeting: Symposium on Bioelectronics, Biointerfaces, and Biomedical
Interfaces, Cancun, Mexico, Oct. 29-Nov. 3, 2006.
“Performance Limits of
Nanobio Sensors”, M. Alam and P. Nair, The 2 nd Meeting of
American Academy of Nanomedicine, National Academy of Sciences, Washington,
Sept. 9-10, 2006.
“Geometry of Diffusion
defines Performance of Nanobio Sensor”, M. Alam and P. Nair, 4th
Annual Molecular Conduction and Sensors Workshop, Charlottesville , July 26-28, 2006.
“Geometry of Diffusion
and Performance Limits of Nanobiosensors”, M. Alam and P. Nair,
Nanotechnology 501 Lecture Series, Purdue University
, Nov. 2006. ( http://www.nanohub.org/resources/2048/)
“Reliability Physics and
NBTI Degradation”, M.
Alam, Applied Material Distinguished Lecture Series, Aug. 21, San Jose, CA,
2006.
“Negative Bias Temperature
Instability: A Comprehensive Analysis of a Complex Phenomena,” M. A.
Alam, IEEE International Reliability Physics Symposium, Dallas, TX,
April 4-6, 2006.
“A Simple view of NBTI
Degradation,” M. Alam, 11th
International Workshop on Computational Electronics, TU Vienna,
Austria, May 25-27, 2006.
"Negative
Bias Temperature Instability: Physics, Projections, and Reliability
Implications", M. Alam, Workshop on Gate stack Technology and Physics,
Tokyo, Japan, Feb. (2006).
“NBTI Reliability:
Measurement and Modeling”, M. Alam, Reliability Topical Research
Conference, Austin, TX, Oct. 23-26, 2006.
“A Review of New
Characterization Methodologies for TDDB and NBTI’, M. A. Alam, 13 th International Symposium on the
Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore
, 2006.
2005
“Negative Bias Temperature
Instability,” M. A. Alam,
International Reliability Physics Symposium, Dallas, TX,
April, 2005.
"Elementary
Considerations in Reliability Physics: How a simple model illuminates the mechanics of NBTI
degradation, resolves a 40-year old puzzle, and establishes protocol for
lifetime extrapolation”, M. Alam, Semiconductor Interface Specialist
Conference, Virginia, Dec. (2005).
“The
long and Short of Pick-up Transistors ” , M. Alam, N. Pimparkar, S.
Kumar, and J. Murthy, International Semiconductor Device Research Society,
Maryland, Dec. 2005.
"Negative
Bias Temperature Instability: Theory and Modeling ", M. Alam,
International Reliability Physics Symposium, San Jose, CA, April, 2005.
“On Reliability of
Microelectronic Devices: An Introductory Lecture on Negative Bias
Temperature Instability”, M. Alam, Nanotechnology 501 Lecture Series,
Purdue University , Oct. 2005. (
http://www.nanohub.org/resources/193/)
“Simulation
of Electronic Detection of DNA”, P. R. Nair and M. A. Alam, Workshop on
Electronic Detection of Bio-molecules, Virgina, 2005.
“Elementary Consideration of
NBTI Degradation,” M. Alam, IRPS Tutorial, April 5-10, San Francisco, CA
(2005).
“On Reliable Circuits and
Systems: How Reliability Considerations Are Reshaping Oxide Scaling, Device
Geometry, and VLSI Algorithm,” M. Alam, H. Kuflouglu, B. Paul, K.
Kang, and K. Roy, ICICDT Meeting,
Austin, Texas, (2005).
2000-2004
“Mechanism of Negative Bias Temperature
Instability in CMOS Devices: Degradation, Recovery, and Impact of
Nitrogen,” S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and
S. Saha, IEDM Meeting, San
Francisco , CA (2004).
“Current
Status of Modeling of NBTI Phenomenon,” M. Alam, IRPS Year End
Review, April 2-4, Phoenix
, Arizona
(2004).
“The Physics of Soft Breakdown
and its Implication for Integrated Circuits,” M. Alam, B. Weir, P. Silverman, and
K. Smith, International Reliability Physics Symposium, April 2-4, Dallas, Texas (2003).
“Prospects
of Using Thin Oxidies for
Silicon Nanotransistor,”
M. A. Alam, B. E. Weir, and P.J. Silverman, International Workshop on Gate
Insulators, Jan. 20-22,
Tokyo, Japan (2002).
“Low
-Voltage Gate Dielectric Reliability,” B. Weir, M. Alam, P. Silverman, and
Y. Ma, The Ninth
International Symposium on Silicon Materials, Science, and Technology, May 20-23, Philadelphia, PA, (2002).
“Microscopic
Simulation of Multi-Quantum Well Semiconductor Diode Lasers,” M. S.
Hybertsen, B. Witzig,man, M. A.
Alam, and R. K. Smith, 8
th International Workshop on Computational Electronics, Beakman
Institute, University of Illinois, Urbana-Champaign, IL, Oct. 15-18, (2001).
“A Computational Model for
Oxide Breakdown - Theory and Experiments,” M. A. Alam, B. Weir, J. Bude, P.
Silverman, and A. Ghetti, 12-th
Biennial INFOS Conference, June 20-23, Udine, Italy (2001)
“A Computational Study of Oxide
Reliability,” M. A. Alam,
B. Weir, and P. Silverman, 31st
IEEE Semiconductor Interface Specialists Conference, San Diago, California,
Dec. 7-9, (2000).
“Physics and Prospects of
sub-2nm Oxides,” M. A.
Alam, B. Weir, P. Silverman, J. Bude, A. Ghetti, Y. Ma, M. Brown, D. Hwang, and A.
Hamad, 4-th International
Symposium on the Physics and Chemistry of SiO2 and Si-SiO2 interfaces, May
15-18, Toronto, Canada, (2000).
“Ultra-thin
Oxide Reliability Projections and Alternate Dielectrics,” B. Weir, G. Wilk, M. Alam, P.
Silverman, F. Baumann, C. Monroe,
A. Ghetti, J. Bude, G. Timp, A. Hamad, Y. Ma, M. Brown, D. Hwang, T.
Sorsch, A. Ghetti, 1st European
Workshop on Ultimate Integration of Silicon, Grenoble, France, Jan. 20-21,
(2000).
1993-1999
“Gate Oxides in 50nm
Devices: Thickness Uniformity
Improves Projected Reliability,”
B. Weir, M. Alam, P. Silverman, A. Hamad, F. Baumann, G. Timp, A.
Ghetti, Y. Ma, M. Brown, and T. Sorsch, IEEE International Electron Devices
Meeting, Dec. 2-4, Washington, DC (1999).
“Future ULSI Devices with 1.5-2.5nm
Gate Oxides,” B Weir, P.
Silverman, M. Alam, J. Bude, D. Monroe, N. Zhao, A. Hamad, F. Li, Y.
Ma, M. Brown, D. Muller, A.
Ghetti, F. Baumann, Y. Kim, T. Sorsch, and G. Timp, 1st International Workshop on
Dielectric Thin Films for
Future ULSI Devices:
Science and Technology, Tokyo, Japan, October (1999).
“Soft Breakdown in Ultra-Thin
Oxides,” B. Weir, P.
Silverman, G. Alers, D. Monroe, M. Alam, T. Sorsch, M. Green, G. Timp,Y.
Ma, M. Frei, C. T. Liu, J. Bude, and K. Krisch, Materials Research Society, San
Francisco, CA, June (1999).
“Strategies of Surface
Preparation for Ultra Thin Gate Dielectrics,” J. Rosamilia, J.
Sapjeta, T. Boone, M. Alam, F. Baumann, R. Masaitis, S. Moccio, D. Muller,
P. Silverman, T. Sorsch, G. Timp, B. Weir, Y. Chen, J. Liu, Y. Ma, S.
Kuchne, R. Myricks, B. DeSelms, G. Higashi, J. Corbacho, P. Dominguez, M.
Rodriguez, B. Chung, G. Marshall, and C. Pearce, Presentation at the
Symposium of Cleaning Technology in Semiconductor Mfg., Honolulu, HI, October
(1999).
“Process
Simulation of Selective Area MOCVD Growth for Optoelectronic Integrated
Circuits,” M. A. Alam, R. People, and M. S. Hybertsen, SPIE-1999 Photonics West Meeting: Physics and Simulation of
Optoelectronic Devices, Jan. 23-29, San
Jose, CA (1999).
“Role
of doping profile on semicnonductor laser performance: simulation and
experiment,” M. Hybertsen, M. Alam, G. Baraff, K. Smith, G. Belenky, D.
Dotensky, G. Shtengel, C. Reynolds, R. Kazarinov, 18-th CLEO Conference,
Boston, MA (1999).
“Critical
Microscopic Processes in Semiconductor Lasers,” M. A. Alam, M.
Hybertsen, G. Baraff, and R. K. Smith,
MRS Fall Meeting, Symposium B:
Computational Approaches to Predicting Optical Properties of
Materials, Boston, MA
11/29-12/2/99
“Comprehensive
Simulation of Planar Selective Area Growth Process and Nonplanar Epitaxy
Using a 3D Vapor Phase Model,”
M. A. Alam, Presented at
the 9th Bienneial Workshop on Organometallic Vapor Phase Epitaxy, Florida , May, (1999).
“Bandgap-Engineered Optical Interconnects
Using Selective Area Growth MOCVD Process,” M. A. Alam, R. People, S.K. Sputz,
D. Lang, J.E. Johnson, S. Chu,
T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt, E. Isaacs, L. Gruezke, and M.
Marcus. 40-th Electronic
Materials Conference (EMC), Charlotsville, Virgnia, July (1998).
“Fabrication
and Modeling of Optical Interconnects Using Selective Area Growth
Metalorganic CVD,”
R. People, M. A. Alam, M. S. Hybertsen, S. Sputz, E. Isaacs, K.
Evans-Lutterodt, J. Vandenberg, T. Siegrist, T. Pernel,
D. V. Lang, S. N. G. Chu, J. E. Johnson, L. Ketelsen Presentation at the Department of
Physics, Howard University, (October 1998).
“Wavelength
Stability, Performance, and Future Trends forElectroabsorption Modulated Sources,” L. Ketelsen, J. Grenko, S. Sputz, E.
Issacs, J. Vandenberg, J. Johnson, S.G. Chu, M. Hybertsen, K.
Evan-Lutterodt, R. Hartman, M. Geva, R. Glew, C. Pinzone, L. Cheng, P.
Parayanthal, R. People, and M. A. Alam , 16-th CLEO Conference, San Diego, CA
(Feb, 1998).
“Simulation
of Quantum Well Lasers,”
M. A. Alam, R. K. Smith, M. S. Hybertsen, G. A. Baraff, and M. R.
Pinto, SPIE Conference on Physics and Simulation
of Optoelectronic Devices, Feb.
4-10, San Jose, CA (1997).
“Comprehensive
Simulation of Semiconductor Lasers,” M. A. Alam, R.K. Smith, M.S.
Hybertsen, G.A. Baraff, and M.R. Pinto, 24-th International Conference on
Compound Semiconductors (ICCS),
Sept. 10-12, San Diago, CA (1997).
“Numerical
Aspects of Quantum Well Laser Simulation,” M. A. Alam, R. K. Smith, M. S.
Hybertsen, G. A. Baraff, and M. R. Pinto, Presentation at the International
Workshop on Computational Electronics, Notre Dame, Indiana, May. 20-24,
(1997).
“Transport
and Hot Carrier Dynamics for Semiconductor Lasers,” M. A. Alam, presented at the University of
Connecticut Center for Optoelectronics, May 10, (1997).
“Predictive
Simulation for Nanoscale Silicon Technology,” M. R. Pinto, M. A. Alam, and J. D.
Bude. VLSI Symposium, Taiwan
(1996).
“Numerical
Study of Hot-phonon Effects in Quantum Well Lasers,” M. A. Alam and
M. S. Lundstrom, presented at the SPIE Conference on Physics and Simulation
of Optoelectronic Devices, San Jose, CA,
Feb. 4-10, (1995).
“A
Transition Matrix Study of Laser Dynamics,” M. A. Alam and M.S.
Lundstrom, presented at the International Workshop on Computational Electronics,
Portland, Oregon, May 17-21 (1994).
“Scattering
Matrix Approach to Device Simulation,'' M.A. Alam and M.S. Lundstrom,
International Semiconductor Device Research Symposium (ISDRS), Dec. 2-4, (1993).
Publications
in Conference Proceedings
2008
“Multi-probe
Interface Characterization of In0.65Ga0.35As/Al2O3 MOSFET”, D. Varghese,
Y. Xuan, Y. Q. Wu, T. Shen, P. D. Ye, and M. A. Alam, accepted for IEDM 2008, session 15.5.
“Universality
of Interface Trap Generation in Strained/Unstrained PMOS Devices During
NBTI Stress”, A. E.
Islam, J. H. Lee, W. H. Wu, A.
Oates and M. A. Alam, , accepted
for IEDM 2008, session 5.2.
“Percolation
Effects on the Thermal Conductivity of 3D Nanotube Composites”, S.
Kumar, M. Alam, J. Murthy, Proc. of ASME International Mechanical Engineering
Congress and Exposition, 2008.
“Device
Optimization for Organic Photovoltaics with CNT Networks as Transparent
Electrode,”, N. Pimparkar, M. Chowala, M. Alam, IEEE Photovoltaics Specialist
Conference, Aug. 2008. PDF
“Mobility Degradation Due to Interface Traps in
Plasma Oxinitride PMOS Devices”, A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, Proc. of International
Reliability Physics Symposium, Apr 2008, pp. 87-96. PDF Breeze
Presentation.
“Separation method of hole trapping and
interface trap generation and their roles in NBTI Reaction-Diffusion
model”, J. H. Lee, W. H. Wu, A.
E. Islam, M. A. Alam and A. S. Oates, Proc. of International
Reliability Physics Symposium, Apr 2008, pp. 745-746. PDF
“Single
Event Upsets in Floating Gate Memory Cells,” N. Z. Butt, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp.
547-555. PDF Breeze Presentation
“A
Comprehensive Analysis of Off-State Stress in Drain Extended PMOS
Transistors: Theory and Characterization of Parametric Degradation and Dielectric
Failure,” D. Varghese, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan,
and M. A. Alam, Proc. of
International Reliability Physics Symposium, Apr 2008, pp.
566-574. PDF
2007
“A
Bottom-up Redifinition for Mobility and Effect of Poor Tube-Tube Contact on
Performance of CNT-TFT" N. Pimparkar and M. Alam, Device Research
Conference, South Bend, June 18-20, 2007. PDF
“Estimation of Statistical
Variation in Temporal NBTI Degradation and its Impact in Lifetime Circuit
Performance,”, K. Kang, S. P. Park,M. A. Alam, and K. Roy, Proc. of
2007 International Conference on Computer Aided Design (ICCCAD), (Finalists
for the IEEE/ACM William J. McCalla
ICCAD Best Paper Award), Nov.
2007. PDF
“Multi-probe Two-Dimensional
Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface
Damage Predicts Gate Dielectric Breakdown,” D. Varghese, H.
Kufluoglu, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, M. Alam,
International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF
“Theory
and Practice of Ultra-fast Measurements for NBTI Degradation: Challenges
and Opportunities”, A.E. Islam, E. N. Kumar, H. Das, S. Purawat, V.
Maheta, H. Aono, E. Murakami, S. Mahapatra,
and M.A. Alam, International Electron Devices Meeting (IEDM), Washington
DC, USA, Dec 2007. (Nominated for Roger
A. Haken Best Student Paper Award)
PDF
“Material Dependence of NBTI
Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive
Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique,” E. N.
Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A.
Alam and S. Mahapatra, , International
Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF
“Characterization and
Estimation of Circuit Reliability Degradation under NBTI using On-Line Iddq
Measurement,” K. Kang, K. Kim, A. E. Islam, M. Alam, and K. Roy,
Design Automation Conference, June 2007, pp. 358-363 (Nominated for best
paper Award). PDF
“Estimation
of NBTI Degradation Using On-Chip Iddq Measurement,” K. Kang, M.
Alam, K. Roy, Proceedings of International Reliability Physics Symposium,
April 2007, pp. 10-16. PDF
“Selective
Heating Characterization of Nanoplate Devices for Sensing
Applications,” “O.H. Elibol, B. Reddy, Jr. , P.R. Nair, M.A.
Alam ,D.E. Bergstrom and R. Bashir, NSTI Nanotech Conference, Santa Clara,
CA, May 20-24, 2007.
“On The Physical Mechanism of
NBTI In Silicon Oxynitride P-MOSFETs: Can Differences In Insulator
Processing Conditions Resolve The Interface Trap Generation vs. Hole
Trapping Controversy?—S. Mahapatra, K. Ahmed, D. Varghese, A.E.
Islam, G. Gupta, L. Madhav, D. Saha, and M.A. Alam, Proceedings of
International Reliability Physics Symposium, paper 1.1, 2007. PDF
“Prediction
of Five-fold Increase in Current Gain of Optimally Aligned CNT Network over
Random Networks”, Ninad Pimparkar, Coskun Kocabas, Seong Jun Kang,
John Rogers and Muhammad Ashraful Alam, Proc. of MRS Spring Meeting,
2007. PDF
2006
“A
Computational Study of Carbon Nanotube Optoelectronic Devices” Y.
Yoon, Y. Ouyang, M. Alam, and J. Guo, Proc. Optics East, p. 1-12, 2006.
“Simulation
of Carbon Nanotube FETs Including Hot-Phonon and Self-Heating
Effects” S. Hasan, M.
Alam, M. Lundstrom, IEDM Technical Digest, paper 31.4, 2006. PDF
“Gate Leakage vs. NBTI for
Plasma Nitrided Oxides: Characterization, Physical Principles and
Optimization”, A. E. Islam,
G. Gupta, S. Mahapatra, A. T. Krishnan, K. Ahmed, F. Nouri, and M. A. Alam,
IEDM Tech. Digest, pp. 12.4.1, December 2006. PDF
“Universality
of Off-Degradation in Drain Extended NMOS Transistors”, D. Varghese,
H. Kufluoglu, V. Reddy, H. Shichijo, S. Krishnan, and M. Alam . IEDM
Technical Digest, paper. 29.3, 2006. PDF
“Scaling
Limits of 1T-OC DRAM Cells,”
N. Butt and M. Alam, Proc. of SIDPAD, 2006. PDF
"Theoretical
Model for Nanobundle Network Transistors,"N. Pimparkar, J. Guo, M. A. Alam, Proc. of NSTI
Nanotechnology Conference, May 7-11, 2006, Boston, MA,
2006. PDF
“Temporal Parametric Yield
Model of Nano-Scale SRAM Array under Negative Bias Temperature
Instability," K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of
SRC Student Symposium, 2006.
“Temporal Performance
Degradation under NBTI: Estimation and Design for Improved Reliability of
Nanoscale Circuits,“ . B. Paul, K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of Design Automation and Test in Europe, pp. 780-785,
March 2006. PDF
“A Review of New
Characterization Methodologies for TDDB and NBTI”, M. A. Alam, Proc. of 13 th International Symposium on the Physical
and Failure Analysis of Integrated Circuits (IPFA), Singapore , 2006.
“Efficient Transistor-Level
Sizing Technique under Temporal Performance Degradation due to NBTI,”
K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of IEEE International
Conference on Computer Design, October 2006, pp. 216-221. PDF
2005
“Thermal
Transport in Nanotube Composites for Large-Area Macroelectronics,”
Kumar S., Murthy, J., and Alam, M. A,
Proceedings of NHTC, ASME Summer Heat Transfer conference, July
17-22, 2005, San Francisco, California, USA.
“Simulation of Electronic
Detection of DNA using Si-NW sensors,” P. R. Nair and M. A. Alam,
Proc. of Electronic Recognition of Bio-Molecules-2, 2005.
"Performance
Assessment of Sub-Percolating Nanobundle Network Transistors by an
Analytical Model," N. Pimparkar, J. Guo, and M. A. Alam, IEDM Tech. Digest, vol. 21.5, pp.
541, 2005. PDF
“On The Dispersive versus Arrhenius
Temperature Activation of NBTI Time Evolution in Plasma Nitrided Gate
Oxides: Measurements, Theory, and Implications,” D. Varghese, D. Saha, S. Mahapatra,
K. Ahmed, F. Nouri and M. Alam, Proceeding of International Electron Device
Meeting, 2005. PDF
"On
Quasi-Saturation of Negative Bias Temperature Degradation," Proc. of
208th Meeting of The Electrochemical Society (ECS), M. A. Alam and H. Kufluoglu, October, 2005. PDF
“On Reliable Circuits and
Systems: How Reliability Considerations Are Reshaping Oxide Scaling, Device
Geometry, and VLSI Algorithm,”
M. A. Alam, H. Kufluoglu, B. Paul, K. Kang and K. Roy, Proceedings of ICICDT, 2005. PDF
“Computational Modeling of
Negative Bias Temperature Instability for Reliability-Aware VLSI
Design,“ H. Kufluoglu, M. A. Alam, B. C. Paul, K. Kang, K. Roy
Semiconductor Research Corporation (SRC) TECHCON Meeting, October 2005. PDF
“Theory of Current-Ratio Method
for Oxide Reliability: Proposal and Validation of a New Class of Two-Dimensional
Breakdown-Spot Characterization Techniques,” M. Alam, D. Monroe , B. Weir, and
P. Silverman, Proceedings of International Electron Device Meeting, 2005. PDF
2004
“Simulation
of Thermal Transport in Nano-wire Composites for Macro-Electronics
Applications,” Kumar S., Murthy, J., and Alam, M. A., Proceedings of
Integrated Nanosystems, ASME Conference, , Pasadena, California, USA,
September 22-24, 2004.
“Monte-Carlo
Simulation of Carbon Nanotube Devices”, S. Hasan J. Guo, M. Vaidyanathan, M. A.
Alam, and M. Lundstrom, Proc.
of International Workshop on Computational Electronics, West Lafayette, IN,
Oct. 25-27, 2004.
“A
Geometrical Unification of The Theories of NBTI and HCI Time-Exponents and
Its Implications for Ultra-scaled Planar and Surround-Gate
Geometries,” H. Kufluoglu and M. A. Alam, IEEE International Electron Devices
Meeting Proceedings, pp. 113-116, December 2004. PDF
“A Unified Modeling of NBTI and
Hot Carrier Injection for MOSFET Reliability,” H. Kufluoglu and M. A.
Alam, IEEE International Workshop on Computational Electronics-10 Extended
Abstracts, pp. 28-29, 2004. PDF
“Mechanism of Negative Bias
Temperature Instability in CMOS Devices: Degradation, Recovery, and Impact of
Nitrogen,” S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and
S. Saha, Proc. of IEDM, 2004.
“Gate dielectric breakdown: a
focus on ESD protection,” B. E. Weir, C.-C. Leung, P. J. Silverman,
and M. Alam, Proc. of IRPS, pp.
399-404, 2004.
“Methodology for accurate
assessment of soft-broken gate oxide leakage and the reliability of VLSI
circuits,” P. M. Mason, A. J. La Duca, C. H. Holder, D. K. Hwang, and
M. Alam, Proc. of IRPS, pp.
430-434, 2004.
2003
“A
Phenomenological Theory of Correlated Multiple Soft Breakdown Events in
Ultrathin Gate Dielectrics (Best Paper Award)”, M. Alam
and R. K. Smith, Proc. of International Reliability Physics Symposium, pp.
406-411, 2003. PDF
“A Critical Examination of the
Mechanics of Dynamic NBTI for PMOSFETs ,” M. A. Alam, IEDM Technical Meeting, pp. 345-348,
(2003).
“A
New Observation of Bias-Temperature Instability in Thin Gate Oxide
p-MOSFETs,” S. Mahapatra, P. B. Kumar, and M. A. Alam, IEDM Technical Meeting, pp.
337-340, (200
“A
New Model for Atomic Layer Deposition, and its Application to the
Nucleation and Growth of HfO2 Gate Dielectric Layers,” M. A. Alam and M. L. Green, Proc. of
the ALD Conference, Extended Abstract No. 3.2, (2003).
1999-2002
“Effect
of 2nd nearest-neighbors and interface charge on core level
shifts in Zr, Hf-Silicates,”
G.W. Wilk, M. A. Alam,
B.W. Busch, and R.L. Opila,
Proc. 33rd IEEE Semiconductor Interface Specialists
Conference, paper 2.2 (2002).
“Statistically
Independent Soft-Breakdowns Redefine Oxide Reliability
Specifications,” M. A.
Alam, R.K. Smith, B.E. Weir, and P.J. Silverman, IEDM Technical Digest, pp.
151-154, (2002). PDF
“A
Predictive Reliability Model for PMOS Bias Temperature
Degradation,” S.
Mahapatra and M.A. Alam, IEDM Technical Digest, pp. 505-508, (2002).
“Prospects of Using Thin
oxides for Silicon
Nanotransistors,” M. A.
Alam, B. E. Weir, and P.J. Silverman, in Proc. International Workshop on
Gate Insulators, pp.
30-34, (2002).
“Low Voltage Gate Dielectric
Reliability,” B. Weir, M.
Alam, P. Silverman, and Y. Ma,
in ECS Proc. of the ninth international symposium on silicon
materials, science, and technology, eds. H.R. Huff, L. Fabry, S.
Kishino, vol. 2, pp. 465-474, (2002).
“A
Mathematical Description of ALD HfO2 Nucleation and Growth
Behavior,” M. A. Alam and
M. L. Green, and W. Vandervorst,
SEMATECH Meeting on advanced gate dielectrics, Oct. 16, (2002).
“A
New Analytical Model for High Frequency MOSFET Noise,” S. Donati, F. Bonani, G. Ghione, M.
A. Alam, Proceeding of
the Circuits and System Conference, pp. 389-392, (2001).
“Can
an Accurate Anode Hole Injection Model Resolve the E vs. 1/E controversy
?” [Outstanding Paper Award]
M. A. Alam, Jeff Bude, and A. Ghetti,
Proceedings of International Reliability Physics Symposium, pp.
21-26, (2000).
“Physics and Prospects of
sub-2nm Oxides,” M. A. Alam, B. Weir, P. Silverman, J. Bude, A.
Ghetti, Y. Ma, M. Brown, D.
Hwang, and A. Hamad,
Proceedings of 4-th International Symposium on the Physics and
Chemistry of SiO2 and Si-SiO2 interfaces, pp. 365-373, (2000).
“The Statistical Distribution
of Percolation Resistance as a Probe into the Mechanics of Ultra-Thin Oxide
Breakdown,” M. A. Alam,
B. Weir, P. Silverman, Y. Ma, D. Hwang, IEDM Technical Digest, pp. 529-532, (2000).
“Native
and Stress-Induced Traps in SiO2 Films,” A. Ghetti, M. Alam, J. Bude,
E. Sangiorgi, G. Timp, G. Weber,
Proceedings of 4th Symposium on the Physics and Chemistry of SiO2
and the SiO2 Interface,
p. 419, (2000).
“Critical
Microscopic Processes in Semiconductor Lasers,” M. A. Alam, M.
Hybertsen, G. Baraff, and R. K. Smith,
in Proceedings of MRS Fall Meeting, vol. 579, “The Optical
Properties of Materials,” Eds. E.L. Shirley, J.R. Chelikowsky, S. G.
Louie, and G. Martinez (Warrendata, MRS, 2000) pp. 181-192.
“Simulation
of Carrier Dynamics in Multi-Quantum Well Lasers,” M. Hybertsen, M.A. Alam, G. Baraff,
R. Smith, G. Shtengel, C. Reynolds, G. Belenky, in Physics and
Simulation of Optoelectronic Devices VIII SPIE Proceedings, vol. 3944, pp.
486-491, (2000).
“Automatic
Generation of Equivalent Circuits from Device Simulation,” A. Pacelli, M. Alam, M.
Mastrapasqua, and S. Luryi, Conference on Modeling an Simulation of
Microsystems, San Diego, CA, March 27-29, (2000).
“Spot-Size-Converted
1.3mm Directly-Modulated Fabry-Perot and DistributedFeedback Lasers
Suitable for Passive Alignment and 2.5 Gb/s Operation at 85C,” C. Klotzkin, J. Eng, G.
Ford,Erick Michel, S. Alexander,M. Alam, M. Hybertsen, L. Ketelsen, J.
Freund, D. Stampone, L. Reynolds,
IEDM Proceedings, (2000).
“
Ultra-thin Oxide Reliability Projections and Alternate
Dielectrics,” B. Weir, G.
Wilk, M. Alam, and P. Silverman,
Proceedings of the 1st European Workshop on Ultimate Integration
of Silicon, p. 65, (2000).
“Gate
Oxides in 50nm Devices:
Thickness Uniformity Improves Projected Reliability,” B. E. Weir, P. J. Silverman, M. A. Alam, A. Hamad, F. D. Baumann, G.
Timp, A. Ghetti, Y. Ma, M. Brown, and T. Sorsch, IEDM Technical Digest , pp. 437-440, (1999).
“Explanation
of Soft and Hard Breakdown and its Consequences for
Area-Scaling,” M. A.
Alam, B. E. Weir, J. D. Bude, P. J. Silverman, D. Monroe, IEDM Technical Digest, pp.
449-452, (1999).
“An
Anode Hole Injection Percolation Model for Oxide Breakdown - The Doom's Day
Scenario Revisited,” M.
A. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K. Cheung,
and S. Moccio, IEDM Technical Digest,
pp. 715-718, (1999).
“Analysis
of trap-assisted conduction mechanism through silicon dioxide films using
quantum yield,” A.
Ghetti, M. A. Alam, J. Bude, D. Monroe, E. Sangiorgi, and H. Vaidya, IEDM Technical Digest, pp.
723-726, (1999).
“Process
Simulation of Selective Area MOCVD Growth for Optoelectronic Integrated
Circuits,” M. A. Alam, R. People, and M. S. Hybertsen, SPIE Proceedings on Physics and
Simulation of Optoelectronic Devices, vol. 3625, pp. 440-447, (1999).
“Role
of p-doping Profile in InGaAsP Multi-Quantum Well Lasers: Comparison of Simulation and
Experiment,” M.
Hybertsen, M. A. Alam, G. Shtengel, G. Belenky, C. Reynolds, R. K. Smith,
G. Baraff, R. Kazarinov, J.
Wynn, L. E. Smith, SPIE
Conference Proceedings, vol. 3625, p. 524, (1999).
“Role
of Doping Profile on Semiconductor Laser Performance: simulation and experiment,” Hybertsen, M.S.; Alam, M.A.; Baraff,
G.A.; Smith, R.K.; Belenky, G.L.; Donetsky, D.V.; Shtengel, G.E.; Reynolds,
C.L., Jr.; Kazarinov, R.F. in
Proc. of Conference on Lasers and Electro-Optics, pp. 309 –310, 1999.
“Microscopic
Simulation of Optical Gain in Multi Quantum Well Lasers,” M. Hybertsen, M. Alam, G.
Baraff, K. Smith, G. Schtengel, C. Reynolds, R. Kazarnov, G. Belinky, in Proc. IEEE Lasers and
Electro-Optics Society 12th Annual Meeting, vol. 2, pp. 657-658 (1999).
1991-1998
“Trap-Assisted
Tunneling as a mechanism of Degradation and Noise in 2-5 nm
Oxides,” G. A. Alers, B.
E. Weir, M. A. Alam, G. L. Timp, T. W. Sorsch, International Reliability
Physics Symposium, pp.
76-79, (1998).
“Role
of Non-equilibrium Carrier Distribution in Multi-Quantum Well
Lasers,” M. A. Alam, M.
S. Hybertsen, G. Baraff, A. Grinberg, R. K. Smith, Proceedings of International
Conference on Compound Semiconductors, p. 193, (1998)
“Microscopic Simulation of High
Speed InGaAsP Lasers,” M.
A. Alam, M. S. Hybertsen, R. K. Smith, G. Shtengel, and G. Baraff, Presented at the 16-th International
Conference on Semiconductor Lasers (ICSL), Nara, Japan, Oct, (1998).
“Design
Considerations of Optical Interconnects Based on Selective Area MOCVD
Process,” M. A. Alam, R.
People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu, T. Perbell, M. Hybertsen, J.
Vandenberg, K. Evans-Lutterodt,
E. Isaacs, L. Gruezke, and M. Marcus. Presented at the 16-th International Conference on
Semiconductor Lasers (ICSL), Nara, Japan,
Oct, (1998).
“Physics-Based
RF Noise Modeling of Submicron
MOSFETs,” S.
Donati, M. A. Alam, K. Krisch, S. Martin, M. Pinto, H. Vuong, IEDM Technical Digest, pp.
81-84, (1998).
“Ultra-Thin
Gate Dielectrics: They Break Down, but do they Fail?” B. E.
Weir, P. J. Silverman,
M. A. Alam, D. Monroe, G. A. Alers, T. Sorsch, G. Timp, F. Baumann, C.T. Liu, Y.
Ma, and D. Hwang, IEDM Technical Digest, pp. 73-76, (1997).
“Assessment
of Quantum Yield Experiments via Full Band Monte Carlo
Simulations,” A.
Ghetti, M. A. Alam, J. Bude, and F. Venturi,, IEDM Technical Digest, pp.
873-876, (1997).
“Simulation of Quantum Well
Lasers,” M. A. Alam, R.K.
Smith, M.S. Hybertsen, G.A. Baraff, and M.R. Pinto, SPIE Conference Proceedings on Physics
and Simulation of Optoelectronic Devices, vol. 2994, p. 709, (1997).
“Numerical Methods for
Semiconductor Laser Simulation,”
R. K. Smith, M. A. Alam, M. S. Hybertsen, and G. Baraff, in Proc. of International Workshop
on Computational Electronics,
p. 433, (1997).
“Comprehensive
Simulation of Semiconductor Lasers,” M. A. Alam, M. S.
Hybertsen, G. Baraff, R. K. S
mith, M. Pinto, in Proc. of the
24-th International Conference on Compound Semiconductors, pp. 625-630, (1997).
“Microscopic
Treatment of Heterolayer Transport,''
M. A. Alam and M. S. Lundstrom, presented at the SPIE conference on
Optoelectronic Systems and Lasers, Jan. 22-28, (1994).
“Entropy flow in a
Mesoscopic Conductor and the Entropy of Erasure,” P. Bagwell and M. A. Alam, in Proceedings of Physics and
Computation: PhysComp '92, D. Matzke, editor, IEEE Computer Society Press,
Los Alamitos, Calif., Proceedings pp. 271-275, (1993).
“Simulation of Compound
Semiconductor Devices,”
M. A. Alam and M. S. Lundstrom,
presented at the Hot Electron Conference,
England,
May (1993).
“Memory Efficient Scattering
Matrix Device Simulation By Decomposing the Effects of Carrier Scattering
and Field Acceleration,”
M. A. Stettler, M. A. Alam, M. S. Lundstrom, Proceedings of International
Workshop on VLSI Process and Device Modeling, pp. 44–45, (1993).
“Mathematical Aspects of
Scattering Matrix Approach,” M. A. Alam, M.A. Stettler and
M.S. Lundstrom, Proceedings of
the International Workshop on Computational Electronics, pp 127-130, (1992).
“A Critical Assessment of
Hydrodynamic Transport Model using the Scattering Matrix Approach,'' M.
A. Stettler, M. A. Alam, and M.S. Lundstrom, Proceedings of the NUPAD Conference, pp. 97-102, (1992).
“A Monte Carlo simulation Study
of Electronic Transport in Dissipative Structures,'' A. N. Khondker and M. A. Alam, Proceedings of IEEE-Cornell
Conference on Advanced Concepts
in High Speed Semiconductor Devices and Circuits, pp. 160-169,
(1991).
Patents
“Field
Effect Transistors Having Negligible Drain Current Degradation”, A.
E. Islam, and M. A. Alam, Submitted: March 5, 2008.
"Process
for Fabricating An Optical Waveguide," M. A. Alam, R. People, and M.
S. Hybertsen. US Patent Granted on 07/17/2001, Patent Number 6261857.
“Nanowires ”, R. Bashir, O. Elibol, D. Bergstrom, M. Alam, Filed
60/762735, January, 2006.
“Predictive
applications for devices with thin dielectric regions” M. Alam, P.
Mason, R. Kent Smith, Granted on 06/12/2007, Patent Number 7230812.
"Design
and Process of Fabricating Ultra-Short Optical Interconnects," M. A.
Alam, J. Sheridan-Eng, and M. S. Hybertsen, July, (1999).
"Design
of Monolithic Multiple Wavelength VCSELs for WDM applications," M. A.
Alam, M. S. Hybertsen Nov., (1999).
"Design
and Process of Fabricating Collector-up Heterojunction Bipolar Transistors,
" M. A. Alam, H. Gossman, and P. Ye, Oct. (2002).
Thesis (PhD)
Ninad
Pimparkar, “Nonlinear
Electronic and Photovoltaic Characteristics of Nanonet Transistors and
Solar Cells”, 2008. PDF
Haldun
Kufluoglu, “MOSFET Degradation Due to Negative Bias Temperature
Instability and Hot Carrier Injection and Their Implications for
Reliability Aware VLSI Design” ,2007. PDF
Satish Kumar, “Electrical and thermal transport in Nanotube
based Thin film transistors” 2007. PDF
Kunhyuk
Kang, 2007.
Sayeed
Hasan, 2006.
Thesis (MS)
Satish Kumar, “ Electro-Thermal Transport In Nanotube Based Composites For
Macro-Electronic Applications ” 2007. PDF
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