ECE-606: Solid State Devices

Syllabus

Week		Topics	Text	Readings
1		Basic Semiconductor Properties Quantum Concepts /Basic formalism	ADF	Ch. 1 2.1, 2.2
2		Simple QM Problem Solutions Energy Band Theory		2.3 3.1, 3.2
3		Energy Band Theory (3D) Equilibrium Carrier Statistics		3.3 4.1, 4.2
4		Supplemental Carrier Information Concentration Relationship/Calculations		4.3 4.4, 4.5
5		Recombination-Generation		Ch. 5
6		Carrier Transport		Ch. 6
7		PN Junction Diode Electrostatics And I-V Characteristics	SDF Notes	Ch. 5 Ch. 6-6.2.4 D1: 1-10
8		I-V Characteristics PN Junction Diode a.c. Response		6.2.4 7.1, 7.2
9		MS Contacts and Schottky Diodes BJT Fundamentals BJT Static Characteristics (ideal)	SDF + Notes	Ch. 14, D1:11-14 Ch. 10 11.1
10		BJT Static Characteristics (non-ideal) Modern Si BJT Heterojunction Concepts and Analysis	SDF + Notes	11.2 T2: 1-11 T3: 1-41
11		The HBT MOS Fundamentals	Notes	T4: 1-10 T5: 1-16
12		MOS Fundamental (complete) MOS-C C-V Characteristics	Notes SDF	T6: 16-24 16.4, T6: 1-7
13		MOSFET ID-VD Characteristics	SDF Notes	Ch. 17-17.2.4 T7: 1-11
14/15		Non-ideal & small dimension MOS	SDF	Ch. 18, 19

A WORD document of the entire course syllabus and associated information is available: ee606_syllabus_S09.doc