ECE
 EE 612

EE-612: Nanoscale Transistors

Offered every third semester

Fall 2008

TTh 10:30-11:45, Room EE117

Course Description

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part 3, we discuss circuit and systems issues and then examine strained silicon, III-V HEMTs, and nanowire transistors. The use of computer simulation to examine device issues is an integral part of the course.

Course Announcements

  • 2008/12/19: Final exam solution is posted.
  • 2008/11/24: Please consider participating in a survey to help us asses the role of the nanoHUB in education. Your responses will help us understand how to make use of nanoHUB.org in the future. "Survey" can be a link to:" the link"
  • 2008/11/16 : Exam2 solution is posted.
  • 2008/11/14 : HW9 solution is posted.
  • 2008/11/12 : Exam 2 is comprehensive except for CMOS reliability, which will not be covered. You should expect that it will concentrate on topics covered since the last exam, but it is also assumed that you know the material that we covered earlier.
  • 2008/11/10 : The SRC Global Research Collaboration (GRC) offers graduate fellowship. For more information, visit the"web site" and see Professor Mark Lundstrom in EE-310 (lundstro@purdue.edu)
  • 2008/11/09 : HW8 solution is posted.
  • 2008/11/05 : Practice exam2 is posted in the exam section.
  • 2008/11/04 : HW9 is posted. ExamII and final exam information are posted in the exam section.
  • 2008/10/31 : HW7 solution is posted.
  • 2008/10/30 : Lecture 17 is posted.
  • 2008/10/28 : HW8 and Lecture 16 are posted.
  • 2008/10/25 : HW6 solution is posted. Regarding HW7, please include discussion for simulation results.
  • 2008/10/24 : Revised lecture 15 is posted.
  • 2008/10/21 : HW7 is posted.
  • 2008/10/17 : MOSFET tool(ver1.21) is updated and revised HW with some useful comments is posted.
  • 2008/10/17 : Most of problems except problem 4 can be done with current MOSFET tool, which will be updated within today. Announcement will be made.
  • 2008/10/10 : Revised HW6 is posted
  • 2008/10/09 : HW6 due date is postponed until Tuesday,October 21. There will be announcement when modification of MOSFET tool will be done
  • 2008/10/07 : HW6 is posted.
  • 2008/10/06 : Revised exam1 solution is posted.
  • 2008/10/04 : Exam1 solution is posted.
  • 2008/09/30 : HW5 solution is posted.
  • 2008/09/29 : A practice exam for exam1 is posted in the exams section.
  • 2008/09/29 : ROOM CHANGE from EE005 to EE115. EE-612 will meet from 7:30 PM to 10:00PM on Mon, Tues, and Wd, 9/29, 9.30, and 10/1
  • 2008/09/28 : There will be three "review" sessions. Location: EE-005, Time: 7:30 PM - 10:00 PM, Monday:Lectures 5-6, Tuesday: Lectures 7-8, Wednesday: Lectures 9-10.
  • 2008/09/27 : A formular sheet for exam1 is posted in the exams section.
  • 2008/09/26 : Revised HW5 is posted.
  • 2008/09/23 : HW5 is posted and there will be Q&A session for lectures and HW by professor on Thursday.
  • 2008/09/18 : Late HW sets will be graded at 50% of total points.
  • 2008/09/18 : HW4 is due at 10:30am on 09/23/2008. At EE117, TA will collect HW4 and return the graded HW3
  • 2008/09/08 : HW2 is due at 10:30am on 09/09/2008. At EE117, TA will collect HW2 and return the graded HW1
  • 2008/09/02 : Lecture 3 with corrections on pages 29, 45, 47, and 48 has been posted.
  • 2008/08/27 : TA office hours are posted in the course information section.
  • 2008/08/26 : HW1 is posted, Due on 09/02/2008.
  • 2008/08/26 : Please view the lecture "Review of MOSFET Fundamentals"
  • 2008/08/26 : Fall 2006 lectures available on the nanohub at: "ECE 612 Fall 2006"