EE-612: Nanoscale Transistors
Offered every third semester
Fall 2006
MWF 2:30-3:20pm, Room EE117
Syllabus
A PDF document of the course information and syllabus is available:
EE612_F06_syllabus.pdf
| Part 1: |
MOSFET Fundamentals |
5 weeks |
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Course introduction |
pp. 1-8 |
8/21 |
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Semiconductor equations / device simulation |
pp. 9-31, 90-95 |
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1D MOS electrostatics |
pp. 58-68 |
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MOS capacitors |
pp. 68-74, 82-90 |
8/28 |
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Polysilicon gates |
pp. 74-78 |
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Quantum mechanical effects |
pp. 194-200 |
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MOSFET IV: Square law |
pp. 112-117, 78-82 |
9/06 |
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MOSFET IV: Bulk charge |
pp. 117-125 |
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Velocity saturation |
pp. 22-23, 149-158 |
9/11 |
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Ballistic MOSFETs |
class notes |
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Quasi-Ballistic MOSFETs |
class notes |
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Subthreshold conduction |
pp. 125-129 |
9/18 |
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Exam 1
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Wednesday 09/20/2006 |
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Vt, body effect, capacitance |
pp. 129-131, 135-137, 244-247 |
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| Part 2: |
Short channel MOSFETs and CMOS circuits |
5 weeks |
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Effective mobility |
pp. 132-135 |
9/25 |
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Review Exam 1 |
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2D Electrostatics |
pp. 139-149 |
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2D Electrostatics II |
pp. 139-149 |
10/02 |
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Guest Lecture: Power Constrained IC Design |
Dr. D. Frank, IBM |
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MOSFET scaling and the ITRS |
pp. 164-173 |
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Channel profile design |
pp. 173-202 |
10/11 |
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Parasitic S/D resistance / Effective channel length |
pp. 158-160, 240-244, 202-221 |
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Gate induced drain leakage (GIDL) / Gate leakage |
pp. 94-97, 99-100 |
10/16 |
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Gate resistance / Interconnects |
pp. 247-257 |
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CMOS processes / Variations |
pp. 414-417, 200-202 |
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MOSFET Tool Demo / HW discussion |
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10/23 |
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nanoHUB lecture: '... The Future of Moore's Law' |
Shekhar Borkar, Intel |
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CMOS Process Flow |
pp. 414-417, class notes |
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CMOS circuits I |
pp. 257-279 |
10/30 |
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CMOS circuits II / Exam II handed out |
class notes |
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Exam 2: In-class questions
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Friday 11/03/2006 |
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| Part 3: |
New materials and structures |
5 weeks |
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CMOS limits / Submit Exam II |
class notes |
11/06 |
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RF CMOS |
class notes |
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SOI overview |
class notes |
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SOI electrostatics |
pp. 280-283, class notes |
11/13 |
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UTB SOI electrostatics |
class notes |
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MOSFET reliability |
pp. 95-106 |
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Strained silicon MOSFETs |
pp. 285-286 |
11/20 |
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Thanksgiving break |
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Heterostructures |
class notes |
11/27 |
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Heterostructure FETs |
class notes |
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Heterostructure bipolar transistors |
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III-V MOSFETs |
class notes |
12/04 |
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CNT FETs |
class notes |
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Nanowire FETs |
class notes |
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Final Exam
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