EE-612: Advanced VLSI Devices
Spring Semesters, Odd Years
Spring 2005
Course Description
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 begins with a review basic MOS theory along with key process and circuit concepts. Short channel effects in sub-micron channel length MOSFETs are examined, along with device scaling theory. In Part II, the physics of nanoscale MOSFETs is examined along with some device and materials approaches to push CMOS to its limits. Part 3 consists of a series of supplemental seminars that examines new technologies that might complement, or even replace, silicon transistors. The use of computer simulation to examine device issues is an integral part of the course.
Course Announcements
- 2005/5/3 : Slides of NanotubeFET and Si-nanowireFET are posted.
- 2005/4/29: Information of final exam is posted.
- 2005/4/29: Solutions of HW10 and HW11 is posted.
- 2005/4/25: The solution of HW#9 is posted.
- 2005/4/18: HW#11 is posted.
- 2005/4/12: HW#10 is posted.
- 2005/4/8 : Solution of exam II is posted.
- 2005/4/5 : HW#9 is posted.
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