| Part 1: |
: Sub-micron MOSFETs, Circuits, and Systems |
10 weeks |
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Course introduction |
pp. 1-8 |
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Semiconductor equations / device simulation |
pp. 9-31, 90-95 |
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1D MOS electrostatics / capacitors |
pp. 58-75 |
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polysilicon gates / nonequilibrium effects |
pp. 75-82 |
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MOSFET IV: "Exact," square law, bulk charge |
pp. 112-125 |
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Ballistic |
notes |
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Velocity saturation |
pp. 149-154 |
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Subthreshold conduction |
pp. 125-129 |
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Vt, body effect, effective mobility |
pp. 129-135 |
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Exam 1:
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2D Electrostatics |
pp. 139-149 |
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Channel length / effective channel length |
pp. 202-221 |
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Parasitic S/D resistance / gate resistance |
pp. 158-160, 240-250 |
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MOSFET scaling |
pp. 164-173 |
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Vt considerations / channel profile design |
pp. 173-194 |
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Interconnects |
pp. 250-257 |
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CMOS circuits (digital logic, SRAM, DRAM) |
pp. 257-279 |
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CMOS systems and ultimate limits |
(notes) |
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CMOS circuits (RF, gain, linearity, noise) |
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Exam 2:
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| Part 2: |
Nanoscale MOSFETs |
5 weeks |
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Gate capacitance (quantum, discrete dopant, poly depl.) |
pp. 194-202 |
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Gate leakage |
pp. 94-97 |
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High-k gate dielectrics and metal gates |
notes |
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Reliability (NBTI, HCI, TDDB) |
pp. 97-106 |
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SOI technololgy |
pp. 280-283 |
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SOI devices |
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Strained channel MOSFETs |
pp. 285-286 |
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New channel materials |
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Ballistic MOSFETs: I |
notes |
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Ballistic MOSFETs: II |
notes |
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| Part 3 |
beyond conventional MOSFETs: a series of seminars |
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This tentative list of seminars will be organized.
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Nanowire Interconnects |
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One-dimensional MOSFETs (nanowires and nanotubes) |
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Modern Integrated Circuit Processing |
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III-V Heterostructure FETs |
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Coulomb Blockade and Single Electron Transistors |
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Nanoelectronics: Now or Never? |
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A PDF document of the entire course syllabus and associated information is available:
ee612_syllabus_S05.pdf
