ECE
 EE 656

EE-656: Electronic Transport in Semiconductors

Syllabus

Part 1: Ballistic transport in nano-devices 5 weeks
  This part of the course will follow class notes to be handed out. Supplemental reading from the course text is also listed.

 
  Preliminaries: (Review Pierret, Chs. 2-4)  
  Distribution functions (Sec. 3.1)  
  3D, 2D, and 1D carriers (Sec. 1.5)  
  Evaluating moments of f(E) (notes)  
  Density-of-states

(Sec. 1.4)  
  Semiclassical ballistic transport:  
  Semiclassical electron dynamics
(Sec. 1.6)  
  Boltzmann Transport Equation (BTE)
(Sec. 3.2)  
  Solving the BTE in equilibrium
(Sec. 3.4.1)  
  Solving the ballistic BTE
(notes)  
  Resistance of a ballistic conductor
(Secs. 9.9, 9.10)  
  Thermoelectric effects in a ballistic conductor
(notes)  
  Coupled charge and heat transport
(notes)  
  Ballistic devices

(notes)  
  Quantum ballistic transport:  
  Solving the wave equation for ballistic device (notes)  
  The (quantum) local density of states (notes)  
  Transmission and current

(notes)  
Exam 1:
 
 
Interlude:

Hopping Transport and Percolation Theory (notes)  
Part 2: Collision-dominated transport 3 weeks
  The Boltzmann transport equation and the RTA (Secs. 3.1 - 3.5, 4.3)  
  Coupled flow effects
(Secs. 4.1, 4.2)  
  Transport in a B-field
(Sec. 4.4)  
  Applications of coupled flow equations (Secs. 4.5, 4.6)  
  Transport in Heterostructures

(Sec. 4.10)  
Exam 2:
 
 
Part 3: High-field and off-equilibrium transport 5 weeks
  Balance equations (Secs. 5.1 - 5.4)  
  Monte Carlo simulation (Secs. 6.1 - 6.5)  
  Carrier scattering (Secs. 2.1, 1.7, 1.8, 2.2-2.3, 2.14)  
  Low-field mobility (Si and GaAs) (Secs. 4.8 - 4.9)  
  High-field transport in bulk semiconductors (Secs. 7.1 - 7.5)  
  Off-equilibrium transport in devices

(Secs. 8.1 - 8.8)  

A PDF document of the entire course syllabus and associated information is available: ee656syllabusF05.pdf