Klimeck Research Group Members

Development of Numerical algorithms for OMEN:
- Scaling to 59,904 cores. In part published in [P103].
- Scaling of OMEN on a variety of different HPC resources
- A new linear solver based on an optimized renormalization method [J96],[P100].

OMEN applications:

Band-to-band-tunneling in InAs devices
- Momentum-Energy-Resolved Transport in Full-Band Simulations
- Charge Self-consistent Full-Band Transport in Realistic Structures
- Gate Control and Sub-Threshold Swing in BTBT
  Comparison of in pin InAs Devices – SG-UTB / DG-UTB / NW.
InAs/InAlGaAs HEMT devices. published at IEDM 2008 [J104].
n- and p-doped double-gate MOSFETs for the 22nm technology node [P101].
Scatttering in nanowires - atomistic, full band with all phonon modes [J124]

Transport in interband devices using the Non-equilibruim Green's function approach.
Spin-orbit effects in tight-binding and in the k.p formulation
Effective band-gaps of a superlattice.

This work has resulted in software tools on the nanohub:

Multi-Million Atom simulations of quantum dots

Electronic structure of quantum dot stacks [P75].
Fine Structure Splitting in QDs Crystal Symmetry, Strain, and Piezo-Electricity. [J104, P76]
Spectral energy tuning of InAs quantum dots with InGaAs quantum wells. The work is accepted for publication

Electrostatics of semiconductor nanowire mosFETs Orientation dependance of charge distribution in silicon nanowire transistors. The work was presented at Techcon 2008 held at Austin, Texas on November 3/4 , 2008 [P96]
Electronic band-structure calculation in bulk semiconductors as well as confined structures like nanowires, ultra-thin bodies (UTB). This work led to the developement of latest version of Bandstructure Lab V2.0 tool.
Development of tools and simulators for Discover and Learning.
Electrical properties of semiconducting nanowires, developement of modeling tools and comparison of 2D and 3D transport models for nanowires.

Study of the validity of the Top-of-the-Barrier Model in Nanowire FETs. The model is found to work in close agreement with 3D model for a range of device cross-sections and channel lengths. This work was presented at the 13th International Workshop on Computational Electronics (IWCE) held at Tsinghua University, in Beijing from May 27-29, 2009. [P109]

Study of surface and transport oreintation on P-type Nanowire FETs. This work was presented at the proceedings of 7th IEEE Workshop on Microelectronics and Electron Devices (WMED 2009), Apr 03, 2009. [P108]

Benchmarking of Top-of-the-Barrier Model with experimental CV data. This work was done in joint collaboration with IME Singapore, who provided the experimental data. This work has been published in IEEE EDL, vol 30,

Semi-classical simulation of III-V DG MOSFET. This research involves nanoMOS.
Silicon nanowire modeling and characterization

During his tenure in the Klimeck group he worked on the following research projects:

Rapid Application Infrastructure (Rappture) deployment on simulation tools for nanoHUB.

Name	Time	Research, Development, and Deployment Topic	Remark
Benjamin Haley home page	Nov 06-present	Scientific computing in OMEN and NEMO 3D nanoHUB application development and support
Mathieu Luisier home page	Feb 08-present	Development of atomistic quantum transport simulation tools / OMEN Development of Numerical algorithms for OMEN: Scaling to 59,904 cores. In part published in [P103]. Scaling of OMEN on a variety of different HPC resources A new linear solver based on an optimized renormalization method [J96],[P100]. OMEN applications: Band-to-band-tunneling in InAs devices Momentum-Energy-Resolved Transport in Full-Band Simulations Charge Self-consistent Full-Band Transport in Realistic Structures Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices – SG-UTB / DG-UTB / NW. InAs/InAlGaAs HEMT devices. published at IEDM 2008 [J104]. n- and p-doped double-gate MOSFETs for the 22nm technology node [P101]. Scatttering in nanowires - atomistic, full band with all phonon modes [J124]
Jean Michel Sellier	Dec 08-present	Software Engineering and OMEN Development.
Hong-Hyon Park	July 09-present	Noise in nanoelectronics and Software Engineering and OMEN Development.
Micheal Povolotskyi	Sept. 09-present	Software Engineering and OMEN Development.

Student	Time	Thesis Title / Research Topic	Remark
Neerav Kharche home page	Jan 05-present	Electronic structure of strained Si quantum wells and transport in InGaAs channels: Magnetic field dependence of valley-splitting in miscut (100) SiGe/Si/SiGe quantum wells [J79]. Transport characteristics of SiGe nanowires.[J93] Valley degeneracies in (111) Si quantum wells [J113]. Performance Analysis of Ultra-Scaled InAs HEMTs	Co-advised w/ Tim Boykin, UAH
Amritanshu Palaria	Aug 05-present	Ab-initio calculations of Si strucutres	Co-advised w/ Alechandro Strachan
Samarth Agarwal home page	Jun 05-present	NEGF Transport in 1D devices: Transport in interband devices using the Non-equilibruim Green's function approach. Spin-orbit effects in tight-binding and in the k.p formulation Effective band-gaps of a superlattice. This work has resulted in software tools on the nanohub: Quantum transport in Resonant Tunneling Diodes(NEGF based). Techcon 2008(P94) RTD simulation tool with NEGF by using C and Matlab mixed programming. Poisson Schrodinger Solver for 1D heterostructures. Piecewise Constant Potential Barrier Tool.	Physics, Co-advised w/ Ron Reifenberger
Muhammad Usman home page	Aug 05-present	Multi-Million Atom simulations of quantum dots Electronic structure of quantum dot stacks [P75]. Fine Structure Splitting in QDs Crystal Symmetry, Strain, and Piezo-Electricity. [J104, P76] Spectral energy tuning of InAs quantum dots with InGaAs quantum wells. The work is accepted for publication
Hoon Ryu home page	July 06-present	Software Engineering and Development Poisson-Schroedinger solver in OMEN Optical matrix element calculation for quantum dots in NEMO 3D Intel SSE optimization in NEMO 3D Research Study of optical properties of self-assembled Quantum Dot system with realistic dimensions.[C238] Incorporation of Contact Block Reduction with atomisic full band model. [P102] Study of spin blockage phenomena in InGaAs/AlGaAs double dot systems. [J91]
Sunhee Lee home page	Aug 06-present	Tool Development & Numerical Engineering Developing a totally new C++ based nanoelectronic modeling tool (NEMO 3-D: link to previous version) with 3D spatial decomposition, a part of OMEN package [link] [P111][P112][P116] Code optimization, performance benchmarking using TAU, output examples, [link] Numerical implementation/engineering for iterative linear/eigenvalue solvers (with W.T.Aung) Research Finding bandstructure properties of highly doped Si:P system with NEMO 3-D (H.Ryu) [P111] Development of an educational tool, 1D-HETERO using NEMO 3-D, deployed in nanoHUB (J.M.Sellier) Looking at the subthreshold property of undoped n-finFETs using NEMO 3-D based on the ballistic transport model (A.Paul) Comparison of transport properties between tight binding model and k.p (Dr. M.Shin @ KAIST) [P117]
Abhijeet Paul home page	Aug 06-present	Nanowire and finFET transport simulations Electrostatics of semiconductor nanowire mosFETs Orientation dependance of charge distribution in silicon nanowire transistors. The work was presented at Techcon 2008 held at Austin, Texas on November 3/4 , 2008 [P96] Electronic band-structure calculation in bulk semiconductors as well as confined structures like nanowires, ultra-thin bodies (UTB). This work led to the developement of latest version of Bandstructure Lab V2.0 tool. Development of tools and simulators for Discover and Learning. Electrical properties of semiconducting nanowires, developement of modeling tools and comparison of 2D and 3D transport models for nanowires. Study of the validity of the Top-of-the-Barrier Model in Nanowire FETs. The model is found to work in close agreement with 3D model for a range of device cross-sections and channel lengths. This work was presented at the 13th International Workshop on Computational Electronics (IWCE) held at Tsinghua University, in Beijing from May 27-29, 2009. [P109] Study of surface and transport oreintation on P-type Nanowire FETs. This work was presented at the proceedings of 7th IEEE Workshop on Microelectronics and Electron Devices (WMED 2009), Apr 03, 2009. [P108] Benchmarking of Top-of-the-Barrier Model with experimental CV data. This work was done in joint collaboration with IME Singapore, who provided the experimental data. This work has been published in IEEE EDL, vol 30,
Saumitra Mehrotra home page	Aug 07-present	Quantum transport simulation: Development of Nanowire code on nanoHUB. [C219] Educational Tool Developments: Development of simulation tools for semiconductor course work .
Sung Geun Kim home page	Aug 07-present	Transport simulation in nanoscale devices: Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET). OMEN Nanowire: Rappture(GUI) Tool for Atomistic Simulation of Nanowires. OMEN Nanowire: time/memory estimation for various size of nanowires
Yaohua Tan home page	Aug. 08-present	Mapping of ab-initio methods to tight binding and application to nanoscale transport.
Parijat Sengupta home page	Aug. 08-present	Quantum transport simulation Band Structures of Strained Quantum Well and Wire Based Structures
XXX	Your start date here	Please read some notes for prospective students.

Student	Time	Thesis Title / Research Topic	Remark
Seung Hyun Park home page	Aug 07-present	Atomistic Impurity Modeling in Si: Anisotropic Hyperfine Interaction (AHF) (download pdf or ppt) Coherent Transport Adiabatic Passage (CTAP) (download pdf or ppt) D- Modeling for As Donors (download pdf and ppt) Charge Qubit Control (download pdf and ppt)
Ganesh Hegde home page	Aug 07-present	Genetic Algorithm Optimization within the Rappture framework on nanoHUB.org Development of a Rappture based Generic Optimization Engine	co-advised with Michael McLennan
Xufeng Wang home page	Aug 08-present	nanoelectronic modeling of wires and UTBs Semi-classical simulation of III-V DG MOSFET. This research involves nanoMOS. Silicon nanowire modeling and characterization During his tenure in the Klimeck group he worked on the following research projects: Rapid Application Infrastructure (Rappture) deployment on simulation tools for nanoHUB.	co-advised with Mark Lundstrom
Woo-Suhl Cho home page	Aug 08-present	Atomistic Quantum Dot Modeling Quantum Confined Stark Effect in identical and non-identical QD stacks
Matthias (Yui) Tan home page	Aug 08-present	Atomistic Quantum Dot Modeling Quantum Confined Stark Effect in identical and non-identical QD stacks
Zhengping Jiang home page	Aug 08-present	Numerical methodologies in quantum transport: RTD simulation tool with NEGF by using C and Matlab mixed programming.
XXX	Your start date here	Please read some notes for prospective students.

Student	Time	Research or Development Topic	Remark
Naman Chopra	Oct 2008 - present	Rappture application development for nanoHUB.org
Win Than	Dec 2008 - present	Numerical optimization for OOMEN
your name here	why not now?	Rappture application development for nanoHUB.org

Klimeck Research Group Members

Member Gallery - (click on a name or image to jump to their project descriptions)

Research Faculty and Post-Doctoral Researchers:

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