Objective:

• Low voltage, good turn-on/off switches
• Develop low sub-threshold swing FETs with band-to-band-tunneling (BTBT)
• Provide guidance to experiments

Approach:

• Utilized OMEN - atomistic, full band quantum transport simulator
• 3 diff. geom., InAs, 20nm gates. 6nm body/diameter, 1nm Oxide, 5e19/cm3
  

Result:

• Dramatically different sub-thresholds
• Slightly different gate controls

• BTBTdevices much more sensitive to smooth band bending than expected
• gate all-around NW fairs best.

Publication: not published yet.