Single Impurity Electronics
Charge Qubit (P2+) Control |
Rajib Rahman, Seung Hyun Park, Gerhard Klimeck |
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Objective:
- Establish control & design parameters for charge qubits
- Determine the range of feasible surface and barrier gate voltages
- Investigate effects of excited states
Approach:
- Surface and Barrier gates modeled by TCAD potentials
- Coupled impurity potential gives rise to molecular states
- Surface gates create left/right localized states
Results / Impact:
- Smooth voltage control is shown for most configurations
- At higher voltages, the excited states mingle with the lowest states, limiting the range of operating voltages.
- Simulation tool for charge qubit experiments & data analysis.
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