Single Impurity Electronics
D- Modeling for As Donors |
Rajib Rahman, Seung Hyun Park, Gerhard Klimeck |
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Objective:
- Obtain two electron binding energy for Group V donors as a function of E-fields and donor depths.
- D- ground and excited states: Analyze measured Coulomb diamonds from Transport Spectroscopy measurements.
Approach:
- Use a domain of 1.4 M atoms with 1 donor.
- 2nd SCF:
1. Obtain wf from NEMO
2. Calculate electron density and Coulomb repulsion potential
3. Repeat NEMO simulation with the new potential.
4. Break when D- energy has converged.
- 3rd: On-going: D- from configuration interaction
Results
- In the Hartree approximation, D- energy for a bulk donor varies by about 2 meV from measured value.
- D- with field (0 to 50 MV/m) for a donor 3.8 nm from interface.
- Next step : Model interface screening.
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