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Prof. S. Mohammadi
Current Members
Tae-Young Choi
Jeong-Il Kim
Sunkook Kim
Rosa Lahiji
Laleh Rabieirad
Hanil Lee
Jangjoon Lee
Teimour Maleki
Khiem Nguyen
Hasan Sharifi
Daehee Weon
Lin Yu
Past Members
Aryo Santosa
Daehee Weon
Position:
Ph.D. Student
 
Contact Info:
Address:
Purdue University
School of Electrical and Computer Engineering
Birck Nanotechnology Center
1205 West State St.
West Lafayette, Indiana 47907-2057

Phone: (765) 49-63511
Office: Birck 1238
Email: dweon@purdue.edu

Biography:
He received the B.S and M.S. degree in material science and engineering from SungKyunKwan University, Seoul, Korea, in 1994 and 1996 respectively. From 1996 to 2001, he was with Hynix semiconductor, Icheon, Korea as a Senior Research Engineer in Memory R&D, where he was involved in the development of advanced processes for high-performance memory devices. Since 2002, he has been with the School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, where he is currently working toward the Ph.D. degree in the field of fabrication of RF devices and integrated circuits. His research interests are in the area of high-performance passive elements and their applications for RFIC.

Education:
Ph. D in Electrical & Computer Engineering, Purdue University, West Lafayette, Indiana. (Expected Dec. 2006)
M. S. Feb. 1996 in Materials Engineering, Sungkyunkwan University, Seoul, Korea.
B. S. Feb. 1994 in Materials Engineering, Sungkyunkwan University, Seoul, Korea.

Current Research:
  • High-Q Micro-machined 3-D Inductors and Transformers for High Frequency Applications
  • RFICs - High performance circuits utilizing High-Q 3-D inductors and transformers

Research Interests:
  • high-performance passive elements and their applications for RFIC.

Publications:
  1. Dae-Hee Weon, Linda P. B. Katehi, and Saeed Mohammadi, “3-D Integrated Inductors and Transformers on Liquid Crystal Polymer Substrate” Microwave Symposium Digest, 2006 IEEE MTT-S International, June 2006.
  2. Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, Saeed Mohammadi, and Linda P. B. Katehi, “High Performance 3-D Micro-Machined Inductors on CMOS Substrate,” Microwave Symposium Digest, 2005 IEEE MTT-S International, vol 2, pp.701 – 704, June 2005.
  3. Jeong-Il Kim, Dae-Hee Weon, Jong-Hyeok Jeon, Saeed Mohammadi, and Linda P. B. Katehi, “Design of Toroidal Inductors Using Stressed Metal Technology,” Microwave Symposium Digest, 2005 IEEE MTT-S International, vol 2, pp.705 – 708, June 2005.
  4. Dae-Hee Weon, Jong-Hyeok Jeon, Jeong-Il Kim, Saeed Mohammadi, and Linda P. B. Katehi, “High-Q Integrated 3-D Inductors and Transformers for High Frequency Applications,” Microwave Symposium Digest, 2004 IEEE MTT-S International, vol 2, pp. 877-880, June 2004.
  5. Jung-Ho Lee, Jeong-Youb Lee, Dae-Hee Weon, Seung-Ho Hahn, Seok-Kiu Lee, and Masakazu Ichikawa, "Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy", J. Vac. Sci. Technol. B 21, [3] 936 (2003).
  6. Y.S. Sohn, D.H. Weon, S.H. Hahn, J.H. Lee, J.Y. Lee, C.W. Ryoo, M.K. Park, C.Y. Kang, T.E. Hong, H.J. Kim, S.K. Lee and J.W. Park, “Ultra-Shallow SSR-Channel Doping for High Performance Sub 100nm MOSFET,”Ion Implantation Conference (ICON-2001), (2001).
  7. Jung-Ho Lee, JeongYoub Lee, Somit Talwar, Yun Wang, DaeHee Weon, Seung-Ho Hahn, Chang-Yong Kang, Taeeun Hong, Younggwan Kim, Haewang Lee, Seok-Kiu Lee, Jaesung Roh, Daegwan Kang and Jinwon Park, “Laser Thermal Annealed SSR well Prior to Epi-channel Growth (LASPE) for 70 nm nFETs,”Technical Digest of International Electron Device Meeting (IEDM), p.1005, (2000).
  8. DaeHee Weon, Seung-Ho Hahn, Seok-Kiu Lee, Jae-Sung Roh and Jin Won Park, “Silicon Surface Deformation During H2 Bake In SEG Using LPCVD For Epitxial Silicon Channel,” The 198th Meeting of The Electrochemical Society, Abs.NO. 829, (2000).
  9. Seung-Ho Pyi, In-Seok Yeo, DaeHee Weon, Young-Bog Kim, Hyeon-Soo Kim and Sahng-Kyoo Lee, “Roles of Sidewall Oxidation in the Devices with Sallow Trench Isolation,” IEEE Electron Devices Lett., Vol. 20, NO. 8, p. 384, August (1999)
  10. DaeHee Weon, Ju-Hoon Lee, Jee-Hyung Kim, Geun-Young Yeom, Ju-Wook Lee and Joung-Yong Lee, “Investigation of Damage in Silicon Produced during Trench Isolation Process,” Journal of Korean Materials Society, Vol. 6, p.524, (1996).
  11. DaeHee Weon, Jee-Hyung Kim, Young-A Cho, Ju-Wook Lee, Joung-Yong Lee and Geun-Young Yeom, “Damage in Silicon Produced during Trench Isolation Process and Its Recovery Phenomena,”The International Union of Materials Research Societies International conference in Asia, p773-776, (1995).
  12. DaeHee Weon , Jee-Hyung Kim, Young-A Cho, Ju-Wook Lee, Joung-Yong Lee and Geun-Young Yeom “Investigation of Recovery Process of Damage Produced during Trench Isolation Process,”The 9th symposium of The Korean Vacuum Society, I-22 (1995).
  13. DaeHee Weon, Ju-Wook Lee, Kwang-Ho Kwon, Won-Seok Lee, Joung-Yong Lee, Geun-Young Yeom, “Investigation of Contamination Produced during Silicon Etching and Annealing,” The 8th symposium of The Korean Vacuum Society, (1995).
  14. Won-Seok Lee, Jin-Ho Lee, Hyun-Soo Kim, DaeHee Weon and Geun-Young Yeom “Fabrication of RF Sputter Etch Chamber with TCP and Investigation of Characteristics,”The 8th symposium of The Korean Vacuum Society, (1995).

Patents:
  1. US Patent No. 6,599,803, DaeHee Weon and Seung-Ho Hahn, Method for fabricating semiconductor device
  2. US Patent No. 6,544,822, Kim, Tae Kyun and DaeHee Weon, Method for fabricating MOSFET device
  3. US Patent No. 6,472,303, DaeHee Weon and Seok Kiu Lee, Method of forming a contact plug for a semiconductor device
  4. US Patent No. 6,407,005, DaeHee Weon, Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region
  5. US Patent No. 6,368,925, DaeHee Weon and Seung-Ho Hahn, Method of forming an EPI-channel in a semiconductor device
  6. Korean Patent No. 225,953, DaeHee Weon and Seung-Ho Pyi, "Title in Korean," Appl. No. 1996-080251 (Filed Dec. 31, 1996).
  7. Korean Patent No. 235,971, DaeHee Weon and Seung-Ho Pyi, "Title in Korean," Appl. No. 1997-028667 (Filed June 28, 1997).
  8. Korean Patent No. 256,821, DaeHee Weon and Seung-Ho Pyi, "Title in Korean," Appl. No. 1997-026848 (Filed June 24, 1997).
  9. Korean Patent No. 257,759, DaeHee Weon and Seung-Ho Pyi, "Title in Korean," Appl. No. 1997-075077 (Filed Dec. 27, 1997).
  10. Korean Patent No. 265,606, DaeHee Weon and Seung-Ho Pyi, "Title in Korean," Appl. No. 1997-063267 (Filed Nov. 26, 1997).
  11. (US) 20060176136, DaeHee Weon, Saeed Mohammadi, Jong-Hyeok Jeon, and Linda P.B. Katehi ‘3-D transformer for high-frequency applications’ in US patent pending.
  12. (US) 20010046775, DaeHee Weon, ‘Method for forming semiconductor device to prevent electric field concentration from being generated at corner of active region’ in US patent pending.
  13. (US) 20010040292, Seung-Ho Hahn, DaeHee Weon, Jeong-Youb Lee, Jung-Ho Lee, Chung-Tae Kim, ‘Semiconductor device having a contact plug formed by a dual epitaxial layer and method for fabricating the same’ in US patent pending.
  14. US Patent Appl. No. 09/407681, DaeHee Weon and Seung-Ho Pyi, (Filed Sep. 28, 1999).
  15. US Patent Appl. No. 09/722021, DaeHee Weon and Seung-Ho Pyi, (Filed Nov. 27, 2000).
  16. US Patent Appl. No. 09/745444, DaeHee Weon and Seung-Ho Pyi, (Filed Dec. 26, 2000).
  17. Japanese Patent Appl. No. 2001-14607, DaeHee Weon, Seung-Ho Hahn, Jung-Ho Lee, Jeoung-Youb Lee and Chung-Tae Kim, (Filed Jan. 23, 2001).
  18. Japanese Patent Appl. No. 2001-73892, DaeHee Weon and Seung-Ho Pyi, (Filed Jan. 23, 2001).
  19. Japanese Patent In Preparation, DaeHee Weon and Tae-Kyun Kim,. [Korea Patent Appl. No. 2000-034321 (Filed June 21, 2000)].
  20. Japanese Patent In Preparation, DaeHee Weon and Seung-Ho Hahn,. [Korea Patent Appl. No. 2000-037005 (Filed June 30, 2000)].
  21. Taiwanese Patent Appl. No. 90115303, DaeHee Weon, Seung-Ho Hahn, Jung-Ho Lee, Jeoung-Youb Lee and Chung-Tae Kim, (Filed June. 22, 2001)].
  22. 49 Korean Patents in pending.
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Last Updated September 9/30/2006