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Also known as "High speed tranistor and Resonator".
We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure.
The device has a gate length of 3 µm and achieves a unity gain frequency fT of 2.5GHz and a maximum
oscillation frequency fmax of >5GHz. The high frequency performance of the device is attributed to the
ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.
Project Timeline
Percent completed: ??
Completion Date: ??
Project Members
Sunkook Kim
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