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| Electrical Performance of SWCNT-FET |
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Brief Description
High-performance single-walled carbon nanotube field-effect-transistors (SWCNT -FETs)
fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics are demonstrated.
A 1.5µm gate-length p-type SWCNT-FETs with 15 nm Al2O3 insulator thickness achieves a gate
leakage current below 10-11A at -2.5 V < VG < 7 V, sub-threshold swings of S ~ 105 mV per decade,
the extracted trans-conductance of 3uS at a drain bias of 0.2V, and a maximum on-current of -12 A
at a reverse gate bias of -1V. The paper provides an in depth study of the growth of the ALD Al2O3
for SWCNT applications towards obtaining a good interface quality and a potential to integrate these
unique devices with CMOS transistors.
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Cross-section of transistor device with CNT between the two drain and source regions.
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Graph of the drain-source current as a function of V DS.
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Project Timeline
Percent completed: ??
Completion Date: ??
Project Members
Sunkook Kim
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©2006-2007 HINET Group.
Last Updated September 9/30/2006 |
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