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  1. Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, "A high power and high gain X-band Si/SiGe heterojunction bipolar transistors ," IEEE trans. on Microwave Theory and Techniques, Vol 50, No 4, April 2002, pp.1101-1108.
  2. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak, , K. Strohm, J.F. Luy, "Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors, " Electronic Letters, Vol. 37, No. 18, pp. 1-2, Aug 2001.
  3. Jae-Woo Park, D. Pavlidis, S. Mohammadi, J-L. Guyaux and J-C Garcia, "Improved Emitter Transit Time Using AlGaAs-GaInP Composite Emitter in GaInP/GaAs Heterojunction Bipolar Transistors, " IEEE trans. on Electron Devices, vol. 48, pp. 1297-1303, July 2001.
  4. Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, " An X-Band High-Power Amplifier Using SiGe/Si HBT and Lumped Passive Components, " IEEE Microwave and Wireless Components Letters, vol.11, no. 7, pp. 287-289, July 2001.
  5. Saeed Mohammadi and D. Pavlidis, "A non-fundamental theory of low-frequency noise in semiconductor devices, " IEEE trans on Electron Devices, vol. 47 no. 11, pp.2009-2017, Nov. 2000.
  6. Saeed Mohammadi, J-W. Park, D. Pavlidis, J.L. Guyaux and J.C. Garcia, "Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, " IEEE trans. on Microwave Theory and Techniques, vol. 48 no. 6, pp. 1038-1044, June 2000.
  7. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, " Relation between low-frequency noise and long-term reliability of AlGaAs/GaAs single power HBTs, " IEEE trans. on Electron Devices, vol.47 no. 4, pp. 677-686, Apr. 2000.
  8. Saeed Mohammadi, S.M. Hubbard, C. Chelli, D. Pavlidis and B. Bayraktaroglu, "Photo-Luminescence and Transmission Electron Microscope studies of low- and high-reliability AlGaAs/GaAs HBTs," J. Solid State Electronics , vol. 44 no. 4, pp. 739-746, April 2000
  9. Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, "High Power X-band (8.4 GHz) SiGe/Si Heterojunction Bipolar Transistor, " Electronic Letters, Vol 37 No 12, pp. 790 -791, June 2001.
  10. Jae-Woo Park, S. Mohammadi and D. Pavlidis, "Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics," J. Solid State Electronics, vol. 44, pp. 1847-1852, 2000.
  11. Jae-Woo Park, S. Mohammadi, D. Pavlidis, C. Dua, J-L. Guyaux and J-C. Garcia, "Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology," J. Solid State Electronics, vol. 44, pp. 2059-2067, 2000.
  12. J.C. Garcia, C. Dua, S. Mohammadi, J-W. Park and D. Pavlidis, "Growth characterization of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors," Journal of Electronic Material , vol. 27 no. 5, pp. 442-445, May 1998.
  13. Saeed Mohammadi and C.R. Selvakumar, "Calculation of depletion layer thickness by including the mobile carriers, " IEEE trans. on Electron Devices, vol. 43 no. 1, pp. 185-188, Jan. 1996.
  14. Saeed Mohammadi and C.R. Selvakumar, "Analysis of BJTs, pseudo-HBTs and HBTs by including the effect of neutral base recombination, " IEEE trans. on Electron Devices, vol. 41 no. 10, pp. 1708-1715, Oct. 1994.


  1. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, M.B. Steer "Polymer-membrane-supported fin-line frequency multipliers," IEEE Radio and Wireless Conference (RAWCON) 2002. pp. 281-284.
  2. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, H. Khalkhali, K. Kurabayashi, "Polymer micro-heat-pipe for InP/InGaAs technologies," IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), 2002. pp. 143-148.
  3. W,Y. Liu, J. Suryanarayanan, Saeed Mohammadi, M.B. Steer, L.P.B. Katehi, Toroidal Inductors for Integrated Radio Frequency and Microwave Circuits RFIC Symposium 2003, Philadelphia, PA, June 200
  4. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, "SiGe-Based HBTs for High-Frequency Microwave Power Amplification ," 2002 Asia Pacific Microwave Conference, Kyoto, Japan Nov 19-22, 2002, pp. 1563-1566.
  5. Zhenqiang Ma; Mohammadi, S.; Bliattacharya, P.; Katehi, L.P.B.; Alterovitz, S.A.; Ponchak, G.E. , "An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier," Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002 , 2002 Page(s): 151 -154.
  6. Wai Y. Liu; Mohammadi, S.; Katehi, L.P.B.; Steer, M.B. , "Polymer-membrane-supported fin-line frequency multipliers," Radio and Wireless Conference, 2002. RAWCON 2002. IEEE , 2002 Page(s): 281 -284
  7. Saeed Mohammadi, Z. Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S.A. Alterovitz, K. M. Strohm, J.-F. Luy, " SiGe/Si Power HBTs for X- to K-Band Applications, " RFIC 2002, Seattle, WA, June 2002, Page(s): 373 -376.
  8. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, "Power Performance of X-Band Si/SiGe/Si HBTs, " Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, pp. 170-176, Sep. 2001.
  9. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, "A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor," IEEE Topical Workshop on Power Amplifiers for Wireless Communications, Sand Diego, CA, Sep 2001.
  10. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, "Si/SiGe Power Heterojunction Bipolar Transistors for Ku-Band Applications," Late news paper in 59th Device Research Conference, Notre Dame, IN, June 2001.
  11. L-H. Lu, S. Mohammadi, Z. Ma, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J.F. Luy, P.K. Bhattacharya and L.P.B. Katehi, " Power SiGe heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology, " IEEE MTT-S International Microwave Symposium, Phoenix, AZ, May 2001.
  12. L-H. Lu, S. Mohammadi, G.E. Ponchak, P.K. Bhattacharya and L.P.B. Katehi, "Design and implementation of micromachined lumped quadrature (90o) hybrids, " IEEE MTT-S International Microwave Symposium, Phoenix, AZ, May 2001.
  13. Saeed Mohammadi, L-H. Lu, Z. Ma, L.P.B. Katehi and P.K. Bhattacharya, G.E. Ponchak and E. Croke, "Microwave noise of Si/Si0.6Ge0.4 heterojunction bipolar transistors, " Silicon Monolithic Integrated Circuits in RF Systems, Garmisch, Germany, pp. 15-18, April 2000.
  14. Saeed Mohammadi, J-W. Park, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, "Optimal design and experimental characterization of high-gain HBT distributed amplifiers, " IEEE MTT-S International Microwave Symposium, Anaheim, CA, v. 2, pp. 685-688, June 13-19, 1999.
  15. J-W. Park, D. Pavlidis, S. Mohammadi, J.L. Guyaux and J-C. Garcia, "Material and processing technology for manufacturing of high speed, high reliability GaInP/GaAs HBT based ICs, " International Conference on GaAs Manufacturing Technology (MANTECH), Vancouver, BC, Canada, PP. 173-176, May 1999.
  16. Saeed Mohammadi, J-W. Park, D.Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, "High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers, " International Electron Device Meeting (IEDM 98), San Fransisco, CA, pp. 661-664 December 6-9, 1998.
  17. Jae-Woo Park, Saeed Mohammadi, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, "GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics, " IEEE MTT-S International Microwave Symposium Digest, (IEEE Radio Frequency Integrated Circuits, RFIC 98), Baltimore, MD, Vol. 1, pp. 39-42, June 7-9, 1998.
  18. D. Sawdai, D. Pavlidis, S. Mohammadi, "Power amplification using NPN and PNP InP HBTs and application to push-pull circuits," 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 45-46, May 24-27, 1998.
  19. J-W. Park, S. Mohammadi, D. Pavlidis, "GaInP/GaAs HBT technology using TBA, TBP precursors and application to optoelectronic circuits," 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 33-34, May 24-27, 1998.
  20. B. Bayraktaroglu, G. Dix, S. Mohammadi and D. Pavlidis, " AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise, " GaAs IC Symposium Technical Digest 1997, Anaheim, CA, pp.157-160, October 12-15, 1997.
  21. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, " Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs HBTs, " Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp. 447-450, September 7-11, 1997.
  22. Jae-Woo Park, D. Pavlidis, S. Mohammadi, C. Dua and J.C. Garcia, "Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy, " Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp. 439-442, September 7-11, 1997.
  23. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, "A novel approach for determining reliability of AlGaAs/GaAs single HBTs from low-frequency noise characteristics," Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 1997.
  24. J-C. Garcia, C. Dua, S. Mohammadi and D. Pavlidis, "Hydride-free chemical beam epitaxy processes and application to GaInP/GaAs heterojunction bipolar transistors," 38th Electronic Material Conference, Santa Barbara, CA, June 1996.
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