Nanowire Transistor Device Development and Characterization

 

 

 

 

 

 

 

 

 

Publications

[1]      S. Ju, K. Lee, D. B. Janes, M.-H. Yoon, A. Facchetti and T. J. Marks, ”Low Operating Voltage ZnO Nanowire Field-Effect Transistors using Ultra-Thin Organic Gate Dielectrics,”  Nanoletters, Vol. 5, p. 2281-2286, 2005.

[2]         S. Ju, K. Lee, D. B. Janes, R. C. Dwivedi, H. Baffour-Awuah, R. Wilkins, M. H. Yoon, A. Facchetti and T. J. Marks,   “Remarkable Radiation Hardness of Single Nanowire Transistors Using Robust Organic Gate Nanodielectrics.  A Total-Integrated-Dose Proton Radiation Study”, Appl. Phys. Lett., 89 (2006) 073510-1-3.

 

[3]         S. Ju, M-H. Yoon, A. Facchetti, T. J. Marks, R. H. P. Chang and D. B. Janes, “Effects of Bias Stress on ZnO Nanowire transistors using Organic Nanodielectrics,” Applied Physics Letters, Vol. 89, p. 193506-8 2006.

 

[4]         Q. Hang, F. Wang, W. E. Buhro and D. B. Janes, “Ambipolar Conduction in Transistors Using Solution Grown InAs Nanowires with Cd Doping”, to appear in Appl. Phys. Lett. 2007.

 

[5]         S. Ju, J. Li, N. Pimparkar, M. Alam, R. P. H. Chang, D. B. Janes, “N-type Field-effect Transistors using Multiple Mg-doped ZnO Nanorods” provisionally accepted in IEEE Trans. on Nanotechnology, 2007.

 

[6]         S. Ju, K. Lee, D. B. Janes,  M-H. Yoon, A. Facchetti and T. J. Marks, “High-Performance ZnO Nanowire Field-Effect Transistors with Organic Nanodielectrics: Effects of Metal Contacts and Ozone Treatment ,“  Nanotechnology, Vol. 18, p. 155201 2007.

 

[7]         S. Ju, Y. Xuan, P. Ye, D. B. Janes, F. Ishikawa, C. Zhou, G. Lu, A. Facchetti, T. J. Marks, “Fully transparent In₂O₃ and ZnO nanowire transistors” Nature Nanotechnology, Vol 2, p. 378-384, June 2007.