Serial Journal Articles:

 

[1]      R. Adler, D. Janes, S. Datta, and B.J. Hunsinger, “Acoustoelectric Measurement of Low Carrier Mobilities in Highly Resistive Films,”Applied Physics Letters, vol. 38, p. 102-103, Jan. 15, 1981.

[2]        D. Janes and M. J. Hoskins “Experimental and Theoretical Characterization of Trap Related Transfer Loss in Acoustic Charge Transport Devices,” Journal of Applied Physics, vol. 66, Oct. 15, 1989, p. 3883-3891.

[3]        D. Janes, M. J. Hoskins, and M. J. Brophy, “Transfer Loss in Acoustic Charge Transport Devices Due to Electron Traps Induced by Proton Bombardment,” Journal of Applied Physics. vol. 66, Dec. 15, 1989, p. 6150-6157.

[4]        D. Janes and M.J. Hoskins, “Trap Emission Rates in GaAs in the Presence of Surface Acoustic Waves,”Journal of Applied Physics, vol. 67, May 15, 1990, p. 6315-6322.

[5]        D. Janes and M. J. Hoskins,“Response Characteristics of Trapping Loss in Acoustic Charge Transport Devices,” IEEE Transactions on Electron Devices, Vol. 39, Nov. 1992, p. 2452-2458.

[6]        G. L. Chen, J. Han, T. Huang, S. Datta, and D. B. Janes, “Observation of the Interfacial-Field-Induced Weak Antilocalization in InAs Quantum Structures,”Physical Review B, vol. 47, Feb. 15, 1993, p. 4084-4087.

[7]        K. C. Huang, M. S. Carroll, G. E. Starnes, R. Lake, D. B. Janes, K. J. Webb, and M. R. Melloch, “Numerically-Generated Resonant Tunneling Diode Equivalent Circuit Parameters” Journal of Applied Physics, Vol. 76, Sept. 15, 1994, p. 3850-3857.

[8]        D. B. Janes, K. J. Webb, M. S. Carroll, G. E. Starnes, K. C. Huang, J. Shenoy and M. R. Melloch, “Direct Current and Microwave Characterization of Integrated Resonant Tunneling Diodes,” Journal of Applied Physics, Vol. 78, Dec. 1, 1995, p. 6616-6625.

[9]        V. R. Kolagunta, G. L. Chen, D. B. Janes, K. J. Webb and M. R. Melloch, “Vertical Three-Terminal Structures in Semiconductor Heterostructure Quantum Wells Using a Novel Sidewall Gating Technique,” Superlattices and Microstructures,Vol. 17, No. 4, 1995, p. 339-343.

[10]      E. B. Cohen, J. S. Shenoy, D. B. Janes, K. J. Webb, J. M. Woodall and M. R. Melloch, “A 2DEG/Low-Temperature-Grown GaAs Dual Channel Heterostructure Transistor,” Superlattices and Microstructures, Vol. 17, No. 4, 1995, p. 345-349.

[11]      D. B. Janes, V. R. Kolagunta, R. G. Osifchin, J. D. Bielefeld, R. P. Andres, J. I. Henderson and C. P. Kubiak, “Electronic Conduction Through Two-Dimensional Arrays of Nanometer Diameter Metal Clusters,” Superlattices and Microstructures, Vol. 18, No. 4, 1995, p. 275-282.

[12]      K. C. Huang, J. Shenoy, D. B. Janes, K. J. Webb and M. R. Melloch, “A Transfer Length Model for Contact Resistance of Two-Layer Systems with Arbitrary Interlayer Coupling Under the Contacts,” IEEE Transactions on Electron Devices, Vol. 43, No. 5, May 1996, p. 676-684.

[13]      R. P. Andres, S. Datta, M. Dorogi, J. Gomez, J. I. Henderson, D. B. Janes, V. R. Kolagunta, C. P. Kubiak, W. Mahoney, R. G. Osifchin, R. Reifenberger, M. P. Samanta and W. Tian, “Room Temperature Coulomb Blockade and Coulomb Staircase from self-assembled Nanostructures,” Journal of Vacuum Science and Technology A,  Vol. 14, May/Jun 1996, p. 1178-1183.

[14]      V. P. Roychowdhury, D. B. Janes, S. Bandyopadhyay, and X. Wang, “Collective Computational Activity in Self-Assembled Arrays of Quantum Dots: A Novel Neuromorphic Architecture for Nanoelectronics,” IEEE Transactions on Electron Devices, Vol. 43, October 1996, p. 1688-1699 (special issue).

[15]      S. Hong, D. B. Janes, D. McInturff, R. Reifenberger and J. M. Woodall, “Stability of a Low-Temperature Grown GaAs Surface Layer Following Air Exposure Using Tunneling Microscopy,” Applied Physics Letters, vol. 68, p. 2258-2260, April 15, 1996.

[16]      V. R. Kolagunta, D. B. Janes, G. L. Chen, K. J. Webb and M. R. Melloch, “Self-Aligned Sidewall Gated Resonant Tunneling Transistors,” Applied Physics Letters, vol. 69, p. 374-376, July 15, 1996.

[17]      R. P. Andres, J. D. Bielefeld, J. I. Henderson, D. B. Janes, V. R. Kolagunta, C. P. Kubiak, W. J. Mahoney and R. G. Osifchin, “Self-Assembly of a Two-Dimensional Superlattice of Molecularly Linked Metal Clusters,” Science, vol. 273, p. 1690-3, Sept. 20, 1996.

[18]      N. Mokhlesi, R. Jazayeri and D. B. Janes, “A Solution for Current-Voltage Characteristics of Multiple Coupled Mesoscopic Tunnel Junctions” Superlattices and Microstructures, Vol. 21, No. 1,  p. 15-19, Jan. 1997.

[19]      M. R. Melloch, D. D. Nolte, J. M. Woodall, J. C. P. Chang, D. B. Janes and E. S. Harmon, “Molecular Beam Epitaxy of Non-Stoichiometric Semiconductors and MultiPhase Material Systems,”Critical Reviews in Solid State and Materials Science, Vol. 21, No. 3, p. 189-263, 1996.

[20]      T.-B. Ng, D. B. Janes, D. McInturff and J. M. Woodall, “Inhibited Oxidation in Low-Temperature Grown GaAs Surface Layers Observed by Photoelectron Spectroscopy,” Applied Physics Letters, Vol. 69, No. 23, p. 3551-3, Dec. 2, 1996.

[21]      V. P. Roychowdhury, D. B. Janes and S. Bandyopadhyay, "Nanoelectronic Architecture for Boolean Logic," Proceedings of the IEEE, Vol. 85, No. 4, p. 574-588, April 1997 (special issue on Nanometer Scale Science and Technology).

[22]      E. B. Cohen, K. J. Webb, D. B. Janes and M. R. Melloch, “Real Space Transfer in a Velocity Modulated Transistor Structure,” Applied Physics Letters, Vol. 70, No. 21, p. 2864-2866, May 26, 1997.

[23]      A. Przadka, K. J. Webb, D. B. Janes, H. C. Liu and Z. R. Wasilewski, “Microwave Measurement of Shot Noise in Resonant Tunneling Diodes,” Applied Physics Letters, Vol. 71, No. 4, p. 530-532, July 28, 1997.

[24]      H. J. Ueng, V. R. Kolagunta, D. B. Janes, K. J. Webb, D. T. McInturff and M. R. Melloch, “ Annealing Stability and Device Application of Nonalloyed Ohmic Contacts using a Low Temperature Grown GaAs Cap on Thin n+ GaAs Layers,” Appl. Phys. Lett., Vol. 71, p. 2496-8, Oct. 27, 1997.

[25]      V. R. Kolagunta, D. B. Janes, M. R. Melloch and C. Youtsey, “Sidewall Gated Double Well Quasi-One-Dimensional Resonant Tunneling Transistors,” Appl. Phys. Lett., Vol. 71, p. 3379-3381, Dec. 8, 1997.

[26]      A. Przadka, K. J. Webb and D. B. Janes,“Two-Port Noise and Impedance Measurements on a Two-Terminal Devices with a Resonant Tunneling Diode Example,” IEEE Trans. on Microwave Theory and Techniques, Vol. 46, p. 1215-1220, Sept. 1998.

[27]      S. Datta, D. B. Janes, R. P. Andres, C. P. Kubiak and R. Reifenberger, “Molecular Ribbons,” Semiconductor Science and Technology, Vol. 13, p. 1347-1353, 1998.

[28]      T. Lee, J. Liu, D. B. Janes, V. R. Kolagunta, J. Dicke, R. P. Andres, J. Lauterbach, M. R. Melloch, D. McInturff, J. M. Woodall, and R. Reifenberger, “An Ohmic Nano-Contact to GaAs,” Appl. Phys. Lett. 74, 2869-2871, May 10, 1999.

[29]      D. B. Janes, V. R. Kolagunta, M. Batistuta, B. L. Walsh, R. P. Andres, J. Liu, J. Dicke, J. Lauterbach, T. Pletcher, E.-H. Chen, M. R. Melloch, E. L. Peckham, H. J. Ueng, J. M. Woodall, T. Lee, R. Reifenberger, C. P. Kubiak, and B. Kasibhatla, “Nanoelectronic Device Applications of a Chemically Stable GaAs Structure,” Journal of Vacuum Science and Technology B  17, p. 1773-1777, Jul./Aug. 1999.

[30]      T. Lee, N.-P. Chen, J. Liu, D. B. Janes, E.-H. Chen, M. R. Melloch, J. M. Woodall, R. P. Andres and R. Reifenberger, "Ohmic Nano-Contact to GaAs with Undoped and P-Doped Low-Temperature Grown GaAs Cap Layers," Appl. Phys. Lett., Vol. 76, p. 212-214, Jan. 10, 2000.

[31]      D. B. Janes, M. Batistuta, S. Datta, M. R. Melloch, R. P. Andres, Jia Liu, N.-P. Chen, Takhee Lee, R. Reifenberger, E. H. Chen, and J. M. Woodall, “Interface and Contact Structures for Nanoelectronic Devices Using Assemblies of Metallic Nanoclusters, Conjugated Organic Molecules and Chemically Stable Semiconductor Layers,” Superlattices and Microstructures, Vol. 27, No. 5-6, p. 555-563, May 2000.

[32]      D. B. Janes, T. Lee, J. Liu, M. Batistuta, N.-P. Chen, B. L. Walsh, R. P. Andres, E.-H. Chen, M. R. Melloch, J. M. Woodall and R. Reifenberger, “Self-Assembled Metal/Molecule/ Semiconductor Nanostructures for Electronic Device and Circuit Applications,” Journal of Electronic Materials (special issue on Quantum Dots), Vol. 29, No. 5, p. 565-569, May 2000.

[33]      N. P. Chen, H. J. Ueng, D. B. Janes, K. J. Webb, J. M. Woodall and M. R. Melloch, “A Quantitative Conduction Model for a Low-Resistance Non-Alloyed Ohmic Contact Structure Using Low-Temperature-Grown GaAs,” Journal of Applied Physics, Vol. 88, pp. 309-315, July 2000.

[34]      J. Liu, T. Lee, D. B. Janes, B. L. Walsh, M. R. Melloch, J. M. Woodall, R. Reifenberger, and R. P. Andres, “Guided Self-Assembly of Au Nanocluster Arrays Electronically Coupled to Semiconductor Device Layers,” Applied Physics Letters, Vol. 77, pp. 373-375, 2000.

[35]      T. Lee, J. Liu, N.-P. Chen, R. P. Andres, D. B. Janes and R. Reifenberger, “Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications,” Journal of Nanoparticle Research  Vol. 2, pp. 345-362, 2000 (review article for special issue).

[36]      H. J. Ueng, D. B. Janes and K. J. Webb, “Error Analysis Leading to Design Criteria for Transmission Line Model Characterization of Ohmic Contacts,” IEEE Transactions on Electron Devices, Vol. 48, pp. 758-766, April 2001.

[37]      R. Zhang, K. Roy, C.-K. Koh, and D. B. Janes, “Stochastic Interconnect Modeling, Power Trends, and Performance Characterization of 3-D Circuits,” IEEE Transactions on Electron Devices, Vol. 48, pp. 638-652, April 2001.

[38]      H. J. Ueng, N.-P. Chen, D. B. Janes, K. J. Webb, D. T. McInturff and M. R. Melloch,“Temperature Dependent Behavior of Low-Temperature-Grown GaAs Nonalloyed Ohmic Contacts,” Journal of Applied Physics, Vol. 90, No. 11, pp. 5637-5641, 1 December 2001.

[39]      H. A. McNally, D. B. Janes, T. Rakshit, S. Datta, B. Kasibhatla and C. P. Kubiak, “Electrostatic Investigation into the Bonding of Aromatic Molecules to Gold,” to appear in Superlattices and Microstructures.

[40]      S. Howell, D. Kuila, B. Kasibhatla, C. P. Kubiak, D. B. Janes, and R. Reifenberger, “Molecular Electrostatics of Conjugated Self-Assembled Monolayers on Au(111) using Electrostatic Force Microscopy,”   Langmuir, Vol. 18, pp. 5120-5125, 2002.

[41]      S. Lodha, D. B. Janes, and N.-P. Chen, “Fermi Level Unpinning in Ex-Situ Schottky Contacts to n:GaAs Using a Low-Temperature-Grown GaAs Cap Layer,” Applied Physics Letters, Vol. 80, No. 23, pp. 4452-4, 10 June 2002.

[42]      S. Lodha, D. B. Janes, N.-P. Chen and E. H. Chen, “Unpinned Interface Fermi Level in Schottky Contacts to N:GaAs Capped with Low-Temperature-Grown GaAs; Experiments and Modeling Using Defect State Distributions,” Journal of Applied Physics, Vol. 93, p. 2772, 2003.

[43]      J. Choi, K. Lee and D. B. Janes, “Nanometer Scale Gap made by Conventional Micro-scale Fabrication,”  Nanoletters, Vol. 4, p. 1699-1703, 2004.

[44]      S. Lodha and D. B. Janes, “Enhanced Current Densities in Au/Molecule/GaAs Devices, Appl. Phys. Lett., Vol. 85, p. 2809-11, 2004.

[45]      S. Howell and D. B. Janes, “Time Evolution Studies of the Electrostatic Surface Potential of LTG:GaAs Using Electrostatic Force Microscopy,” to appear in Journal of Applied Physics, 2005.

[46]      S. Ju, K. Lee, D. B. Janes, M.-H. Yoon, A. Facchetti and T. J. Marks, ”Low Operating Voltage ZnO Nanowire Field-Effect Transistors using Ultra-Thin Organic Gate Dielectrics,”  Nanoletters, Vol. 5, p. 2281-2286, 2005.

[47]      S. Ghosh, H. Halimun, A. Mahapatro, J. Choi, S. Lodha and D. B. Janes, “Device Structure for Electronic Transport Through Individual Molecules Using Nanoelectrodes,” Applied Physics Letters, Vol. 87, p. 233509-233511, 2005.

[48]       S. Lodha, P. D. Carpenter and D. B. Janes, “Effect of Contact Properties on Current Transport in Metal/Molecule/GaAs Devices,” Journal of Applied Physics, Vol. 99, p. 024510-9, 2006.

[49]       A. Mahapatro, S. Ghosh and D. B. Janes, “Nanometer Scale Electrode Separation (Nano-gap) Using Electromigration at Room Temperature,” IEEE Transactions on Nanotechnology, Vol. 5, No. 3, p. 232-236, May 2006.

[50]       A. Mahapatro, A. Manning, A. Scott and D. B. Janes, “Gold Surface with sub-nm Roughness Realized by Evaporation on a Molecular Adhesion Layer,” Applied Physics Letters, Vol. 88, p. 151917-9, 2006.

[51]       S. K. Saha, M. Dasilva, Q. Hang, T. Sands and D. B. Janes, “A Nanocapacitor with Giant Dielectric Permittivity,” Nanotechnology, Vol. 17, p. 2284-2288, 2006.

[52]       S. Lodha and D. B. Janes, “Metal/Molecule/p-GaAs Heterostructure Devices,” Journal of Applied Physics, Vol. 100, p. 024503-10, 2006.

[53]       Sang-Yup Lee, Jaewon Choi, Elizabeth Royston, David B. Janes, David B. James. N. Culver, and Michael T. Harris,  Deposition of Platinum Clusters on Surface-Modified Tobacco Mosaic Virus, Journal of Nanoscience and Nanotechnology, Vol. 6, No. 4, April 2006, pp. 974-981(8)

[54]       S. Ju, K. Lee, D. B. Janes, R. C. Dwivedi, H. Baffour-Awuah, R. Wilkins, M. H. Yoon, A. Facchetti and T. J. Marks,   “Remarkable Radiation Hardness of Single Nanowire Transistors Using Robust Organic Gate Nanodielectrics.  A Total-Integrated-Dose Proton Radiation Study”, Appl. Phys. Lett., 89 (2006) 073510-1-3.

[55]       S. Ju, M-H. Yoon, A. Facchetti, T. J. Marks, R. H. P. Chang and D. B. Janes, “Effects of Bias Stress on ZnO Nanowire transistors using Organic Nanodielectrics,” Applied Physics Letters, Vol. 89, p. 193506-8 2006.

[56]       M. Maschmann, A. Franklin, A. Scott, D. B. Janes, T. D. Sands and T. S. Fisher, “Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes” to appear in Nano Letters, 2006.

[57]       S. Ju, A. K. Mills, Q. Hang, D. S. Elliott and D. B. Janes, “Neutral Atom Lithography using Sodium Incident on Self-Assembled Monolayers,” to appear in Journal of Vacuum Science and Technology B, 2007.

[58]       Q. Hang, F. Wang, W. E. Buhro and D. B. Janes, “Ambipolar Conduction in Transistors Using Solution Grown InAs Nanowires with Cd Doping”, to appear in Appl. Phys. Lett. 2007.

[59]       S. Ju, J. Li, N. Pimparkar, M. Alam, R. P. H. Chang, D. B. Janes, “N-type Field-effect Transistors using Multiple Mg-doped ZnO Nanorods” provisionally accepted in IEEE Trans. on Nanotechnology, 2007.

[60]       S. Ju, K. Lee, D. B. Janes,  M-H. Yoon, A. Facchetti and T. J. Marks, “High-Performance ZnO Nanowire Field-Effect Transistors with Organic Nanodielectrics: Effects of Metal Contacts and Ozone Treatment ,“  Nanotechnology, Vol. 18, p. 155201 2007.

[61]       A. D. Franklin, M. Maschmann, M. DaSilva, D. B. Janes, T. S. Fisher, and T. D. Sands,  “In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates”, to appear in Journal of Vacuum Science and Technology B, 2007.

[62]       A. Mahapatro, K.-J. Jeong, G. Lee, and D. B. Janes, “Electrical Conduction through Polyion-Stabilized Double-Stranded DNA in Nanoscale Break Junctions,” to appear in Nanotechnology, 2007.

[63]       Q. Hang, M. Maschman, T. Fisher and D. B. Janes, “Assemblies of Single-Wall Carbon Nanotubes and Unencapsulated Sub-10 nm Gold Nanoparticles,” to appear in Small, 2007.

[64]       S. Ju, Y. Xuan, P. Ye, D. B. Janes, F. Ishikawa, C. Zhou, G. Lu, A. Facchetti, T. J. Marks, “Fully transparent In₂O₃ and ZnO nanowire transistors” Nature Nanotechnology, Vol 2, p. 378-384, June 2007.

[65]       A. Scott, C. Risko, M. A. Ratner and D. B. Janes “Fabrication and Characterization of  Metal-Molecule-Silicon Devices,”  Applied Physics Letters, Vol. 91, p. 033508-10, 2007.