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Kunhyuk Kang

Ph.D. Candidate of Electrical and Computer Engineering




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Postal Address: Mail Box #291, Purdue University
1285 Electrical Engineering Building
West Lafayette, Indiana 47907-1285

Office: Room 286 MSEE Building

Phone:

765.414.5136  Cell
765.494.0759  Office

E-Mail: kang18@purdue.edu

Education: B.S., Seoul National University, Korea, 2002
M.S., Rensselaer Polytechnic Institute, Troy, NY, 2003
Ph. D., Purdue University, West Lafayette, IN, 2007 (expected)

Background & Interests:

For the past decades, digital electronic industry has shown phenomenal growth due to scaling of CMOS devices over different technology generations. Scaling of transistor dimension has provided higher computation capability with increased energy efficiency and reduced silicon area. However, as CMOS scaling goes below sub-100nm region, a plethora of new design challenges are emerging as a barrier for further scaling of transistor dimensions. Some of these challenges include ever-increasing variations in process parameters, degradation in circuit reliability and fault/failure tolerance, and increased level of leakage current.

My graduate research is focused on developing efficient VLSI circuit design methodology considering such scaling issues in nano-scale technology. I particularly focused on emerging reliability issues in nano-scale CMOS technology such as process parameter variations and negative bias temperature instability (NBTI). The key achievement of my work was analysis and modeling of nano-scale reliability issues, development of efficient circuit/system level CAD tools and circuit design techniques to relax and minimize reliability degradation in high performance ICs. Through number of different projects, I and my research colleagues have launched various design methodologies and tools which accurately addressed one or more critical reliability issues, and further, enabled automated circuit design flow.