Vita
Research
-Atomic Layer
Depostion (ALD)
ALD
based nano-materials
ALD
based nano-devices
ALD
based nano-physics
ALD
based nano-structures
Courses
ECE 201 Linear Circuit Analysis
ECE 659V High-Speed Semiconductor Device
ECE 658 Semiconductor Material and
Device Characterization
EPICS (Engineering Project In
Community Service)
News
5 Significant Publications
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| Postal Address: |
Purdue University
School of Electrical and Computer Engineering
465 Northwestern Ave.
West Lafayette, Indiana 47907-2035Birck
Nanotechnology Center
1205 West State Street
West Lafayette, Indiana 47907-2057
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| Office: |
BRK 2050 (Birck)
Primary
EE 252 (ECE)
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| Phone: |
Phone: 765.494.7611
Fax: 765.496.7443
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| E-Mail: |
yep@purdue.edu
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| Education:
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* BS, Fudan University,
Shanghai, China, 1988
* Ph.D., Max-Planck-Institute for Solid State
Research, Stuttgart, Germany, 1996
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Background
& Interests:
Semiconductor physics and devices,
Nano-structures and nano-fabrications,
Quantum/spin-transport, Atomic layer deposition,
High-k/III-V device integration,
High-performance III-V MOSFETs, High-k/graphene
integration, High-performance graphene FETs,
Graphene spintronics |
Recent News in our ALD Group:
Yanqing Wu won the Best Student Paper Award at 2007 ISDRS on his epitaxial
graphene FET work. The work is in close collaborations with Prof. Capano and
Prof. Cooper's group. This is our group second time and consecutively won the
Best Student Paper Award at ISDRS.
"Compound Semiconductor" magazine publishes a long
feature article about our recent work on high-performance InGaAs MOSFETs with
maximum drain current exceeding 1 A/mm. This is the third time "Compound
Semiconductor" reports our research on high-k/III-V integration. High-k/GaN and
high-k/InP work was also reported in 2005 and 2007, respectively.
PDF
"IEEE Spectrum" magazine, the most
prestigious one in electrical engineering society, publishes a long
feature article about our break-through work on ALD high-k/InGaAs MOSFET. This
article also reviews the history and current status of GaAs MOSFET research.
PDF
Two papers of "High-performance Surface Channel
In-rich In(0.75)Ga(0.25)As MOSFETs with ALD high-k as Gate Dielectric" and
"Multi-probe Interface Characterization of In(0.65)Ga(0.35)As/Al2O3 MOSFET" are
accepted by IEDM 2008.
Runsheng Wang won the 2008 IEEE EDS Ph.D. student
fellowship for his excellent work on Si nanowire FETs at Peking University
reported in IEDM 2007 and IEDM 2008.
Yanqing Wu receives an IBM Ph.D. Fellowship award
(2009). This award is highly competitive and recognizes the student as well as
the quality of his/her institution.
Science quotes our breakthrough work on
InGaAs MOSFET in its editorial article published on Feb. 20, 2009.
PDF
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